2N5771

2N5771

  • Description:TRANS PNP 15V 0.2A TO-92-3
  • Series:-

SKU:9fc565fd2b38 Category: Brand:

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Product Detailed Parameters

  • Description:TRANS PNP 15V 0.2A TO-92-3
  • Series:-
  • Mfr:onsemi
  • Package:Bulk
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):200 mA
  • Voltage - Collector Emitter Breakdown (Max):15 V
  • Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max):10nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:50 @ 10mA, 300mV
  • Power - Max:350 mW
  • Frequency - Transition:-
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package:TO-92-3
  • Grade:-
  • Qualification:-

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2N5771

Overview

The onsemi 2N5771 is a PNP silicon switching transistor designed for very high-speed saturated switching applications. It operates with collector currents up to 200 mA and features a collector-emitter breakdown voltage of 15 V. The device offers low saturation voltages, such as 0.6 V at 50 mA, and fast switching times including a turn-off time of 20 ns. Thermal dissipation reaches 350 mW in a TO-92 package, supporting junction temperatures from -55°C to +150°C.

Feature Summary

  • Engineered for high-speed saturated switching operations
  • Provides low collector-emitter saturation voltage for efficient conduction
  • Supports wide operating temperature ranges suitable for harsh environments

Applications

  • High-speed digital logic circuits
  • Pulse generation and shaping networks
  • General-purpose switching applications

Procurement Notes

Verify the specific manufacturer origin, as historical production involved Fairchild Semiconductor before acquisition by onsemi. Confirm that the component meets current environmental compliance standards required for your assembly process. Ensure the selected package variant matches your PCB footprint requirements precisely.

Selection Notes

Select this component when circuit designs demand rapid transition speeds and reliable performance under moderate load conditions. Evaluate thermal management needs carefully, as power dissipation limits are strict within standard through-hole packages. Compare against alternative small-signal transistors if higher voltage ratings or different packaging styles are necessary for the target application.

Part Context

Originally developed by Fairchild Semiconductor, this part belongs to a family of general-purpose bipolar junction transistors. It serves as a fundamental discrete semiconductor component used across various electronic systems requiring reliable signal amplification or switching capabilities without complex integrated circuit overhead.

Replacement Considerations

Consult official datasheets for direct equivalents like the MMBT5771. Verify pinout compatibility and electrical parameter alignment before substituting any other PNP transistor models in existing designs.

2N57712N5771

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