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The onsemi 2N5771 is a PNP silicon switching transistor designed for very high-speed saturated switching applications. It operates with collector currents up to 200 mA and features a collector-emitter breakdown voltage of 15 V. The device offers low saturation voltages, such as 0.6 V at 50 mA, and fast switching times including a turn-off time of 20 ns. Thermal dissipation reaches 350 mW in a TO-92 package, supporting junction temperatures from -55°C to +150°C.
Verify the specific manufacturer origin, as historical production involved Fairchild Semiconductor before acquisition by onsemi. Confirm that the component meets current environmental compliance standards required for your assembly process. Ensure the selected package variant matches your PCB footprint requirements precisely.
Select this component when circuit designs demand rapid transition speeds and reliable performance under moderate load conditions. Evaluate thermal management needs carefully, as power dissipation limits are strict within standard through-hole packages. Compare against alternative small-signal transistors if higher voltage ratings or different packaging styles are necessary for the target application.
Originally developed by Fairchild Semiconductor, this part belongs to a family of general-purpose bipolar junction transistors. It serves as a fundamental discrete semiconductor component used across various electronic systems requiring reliable signal amplification or switching capabilities without complex integrated circuit overhead.
Consult official datasheets for direct equivalents like the MMBT5771. Verify pinout compatibility and electrical parameter alignment before substituting any other PNP transistor models in existing designs.