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The Microchip Technology 2N5784 is a single NPN bipolar junction transistor (BJT) designed for through-hole mounting in the TO-39 metal can package. It operates within a temperature range of -65°C to +200°C junction temperature. The device features a maximum collector-emitter voltage of 80 V and a continuous collector current rating of 2 A. DC current gain is specified at a minimum of 70 under test conditions of 2.5 A collector current and 5 V collector-emitter voltage. Maximum power dissipation is rated at 1 W, with a collector cutoff current limit of 100 µA.
Verify component authenticity by cross-referencing the manufacturer part number with official Microchip Technology documentation. Confirm RoHS compliance status as the product does not meet RoHS specifications. Validate packaging details against the distributor's standard bulk packing information before finalizing procurement orders.
Select this component when high junction temperature tolerance and substantial current capacity are required. Ensure the application circuit design accommodates the 1 W power dissipation limit. Verify that the TO-39 through-hole footprint aligns with the target PCB layout requirements.
This discrete semiconductor belongs to the general-purpose power BJT category manufactured by Microchip Technology. It serves as a rugged alternative to plastic-packaged transistors in environments requiring extended thermal endurance and mechanical robustness.
Consult official Microchip Technology substitution guides for verified equivalent part numbers. Do not assume pin-compatible replacements without verifying electrical parameters and package dimensions.