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Product Detailed Parameters
- Description：50V 3.5A 1W TH TRANSISTOR-BIPOLA
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Box
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：3.5 A
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Vce Saturation (Max) @ Ib, Ic：750mV @ 120mA, 1.2A
- Current - Collector Cutoff (Max)：10µA
- DC Current Gain (hFE) (Min) @ Ic, Vce：20 @ 1.2A, 2V
- Power - Max：1 W
- Frequency - Transition：1MHz
- Operating Temperature：-
- Mounting Type：Through Hole
- Package / Case：TO-205AD, TO-39-3 Metal Can
- Supplier Device Package：TO-39
- Grade：-
- Qualification：-
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Overview
The 2N5785 PBFREE is a silicon NPN bipolar junction transistor manufactured by Central Semiconductor Corp. It features a collector-emitter voltage (Vceo) of 50 V and a continuous collector current (Ic) of 3.5 A. The device has a maximum power dissipation (Pd) of 1 W in a through-hole package. Key electrical characteristics include an emitter-base voltage (Vebo) of 5 V, a collector-emitter saturation voltage of 1 V, and a gain bandwidth product (fT) of 1 MHz. The component is RoHS compliant and lead-free.
Feature Summary
- High current handling capability with a 3.5 A continuous collector current rating
- Robust power dissipation performance rated at 1 W for thermal stability
- Complementary symmetry design suitable for paired NPN/PNP applications
Applications
- Power switching circuits requiring high current capacity
- Linear amplifier stages utilizing complementary symmetry pairs
- General-purpose discrete transistor applications in through-hole designs
Procurement Notes
Verify the specific datasheet version for the 2N5785 PBFREE to confirm exact pinout configurations and absolute maximum ratings before integration. Ensure that the ordering suffix PBFREE is correctly applied to guarantee lead-free plating compliance as specified by the manufacturer. Cross-reference the gain bandwidth product and saturation voltage parameters against your circuit requirements to ensure adequate performance margins under load conditions.
Selection Notes
Select this component when designing circuits that require a robust NPN transistor with a 3.5 A current rating and 50 V breakdown voltage. The 1 W power dissipation limit dictates the need for appropriate thermal management solutions such as heatsinks or PCB copper area optimization. Consider the complementary 2N5784 PNP counterpart if symmetrical push-pull configurations are required for the application design.
Part Context
The 2N5785 belongs to a family of epitaxial-base complementary-symmetry transistors produced by Central Semiconductor Corp. These devices are designed to offer matched electrical characteristics when paired with their PNP counterparts, facilitating balanced performance in differential and output stages. The through-hole packaging supports traditional manufacturing processes and high-power thermal dissipation needs.
Replacement Considerations
The 2N5784 PBFREE is the documented complementary PNP transistor within the same symmetry series. Verify pin compatibility and matching hFE ranges if substituting for paired operation. Direct single-transistor replacements may require checking current and voltage ratings against the original design constraints.
