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The Microchip Technology 2N5794UC/TR is a dual NPN silicon small-signal bipolar junction transistor (BJT) array designed for surface-mount applications. It features a UC package with six terminals and no lead construction. The device supports a maximum collector current of 600mA and a collector-emitter breakdown voltage of 40V. Total power dissipation is rated at 600mW, with an operating temperature range extending from -65°C to +200°C.
Verify the specific suffix 'TR' indicates tape-and-reel packaging requirements against project specifications. Confirm RoHS compliance status as historical data may vary by production lot. Ensure the UC package footprint matches the PCB land pattern design. Validate that the 600mA continuous current rating aligns with peak load demands without exceeding thermal limits.
Select this component when a dual NPN configuration is required in a low-profile surface-mount form factor. Consider the 40V breakdown voltage limit for circuit design margins. Evaluate the 600mW power dissipation capability against ambient thermal conditions. Compare the UC package dimensions against available board space relative to through-hole alternatives like TO-78.
This part belongs to the 2N5794 series of dual NPN transistors manufactured by Microchip Technology. It serves as a surface-mount variant of legacy through-hole devices, maintaining electrical compatibility while adapting to modern assembly processes. The UC package provides a compact solution for dense circuit board layouts.
The JAN2N5794U is a qualified military-grade equivalent in a different package. Verify pinout compatibility before substitution. Cross-reference datasheet parameters for minor variations in gain or leakage currents between manufacturers.