2N5794UC

2N5794UC

$61.07
  • Description:TRANS 2NPN DUAL 40V 600MA UC
  • Series:-

SKU:47030cb2af72 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS 2NPN DUAL 40V 600MA UC
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • Transistor Type:2 NPN (Dual)
  • Current - Collector (Ic) (Max):600mA
  • Voltage - Collector Emitter Breakdown (Max):40V
  • Vce Saturation (Max) @ Ib, Ic:900mV @ 30mA, 300mA
  • Current - Collector Cutoff (Max):10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 10V
  • Power - Max:600mW
  • Frequency - Transition:-
  • Operating Temperature:-65°C ~ 200°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-SMD, No Lead
  • Supplier Device Package:UC
  • Grade:-
  • Qualification:-

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2N5794UC

Overview

The Microchip Technology 2N5794UC is a dual NPN silicon bipolar junction transistor (BJT) designed for surface mount applications. It features a hermetically sealed ceramic package with six pins, minimizing circuit board area while maintaining high reliability. Key electrical parameters include a collector-emitter voltage of 40 V and a collector-base voltage of 75 V. The device supports a continuous collector current of 600 mA and operates within a temperature range of -65°C to +200°C. Power dissipation is rated at 600 mW, with an emitter-base voltage of 6 V.

Feature Summary

  • Hermetically sealed ceramic construction for environmental protection
  • Dual NPN configuration in a compact surface mount package
  • High maximum operating temperature capability up to 200°C

Applications

  • Military aerospace circuits requiring hermetic sealing
  • High-temperature electronic systems
  • Small-signal switching applications

Procurement Notes

Verify the specific suffix 'UC' against official Microchip documentation to confirm package type and compliance status. Ensure procurement channels provide valid traceability for military-grade components. Confirm that the supplier can support the extended production cycles associated with specialized semiconductor manufacturing processes.

Selection Notes

Select this component when hermetic sealing and high-temperature operation are critical requirements. The dual NPN structure offers space efficiency compared to discrete single transistors. Verify that the 40V rating and 600mA current capacity align with the target circuit design constraints before integration.

Part Context

This part belongs to the 2N5794 family of dual small-signal transistors. It serves as a surface-mount alternative to traditional through-hole packages, offering similar electrical performance to dual 2N2222 devices but with enhanced thermal and physical robustness suitable for harsh environments.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Evaluate equivalent hermetic dual NPN transistors from other manufacturers only if they meet identical voltage, current, and temperature specifications.

2N5794UC2N5794UC
$61.07
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