2N5817 PBFREE

2N5817 PBFREE

$0.38
  • Description:40V 750MA 625MW TH TRANSISTOR-SM
  • Series:-

SKU:5d615a568b7b Category: Brand:

  
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Product Detailed Parameters

  • Description:40V 750MA 625MW TH TRANSISTOR-SM
  • Series:-
  • Mfr:Central Semiconductor Corp
  • Package:Box
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):750 mA
  • Voltage - Collector Emitter Breakdown (Max):40 V
  • Vce Saturation (Max) @ Ib, Ic:750mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 2mA, 2V
  • Power - Max:625 mW
  • Frequency - Transition:120MHz
  • Operating Temperature:-65°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package:TO-92-3
  • Grade:-
  • Qualification:-

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2N5817 PBFREE

Overview

The Central Semiconductor Corp 2N5817 PBFREE is a single NPN bipolar junction transistor (BJT) designed for general-purpose switching and amplification applications. It features a collector-emitter voltage rating of 25 V and a continuous collector current capacity of 100 mA. The device operates within a junction temperature range of -65°C to 150°C, providing robust thermal performance. Packaged in a TO-92-3 through-hole configuration, it offers a transition frequency of 200 MHz and a maximum power dissipation of 625 mW. This component is suitable for low-power electronic circuits requiring reliable signal processing.

Feature Summary

  • Utilizes silicon planar epitaxial construction for stable electrical characteristics
  • Provides high DC current gain for effective signal amplification
  • Features a lead-free package compliant with environmental standards

Applications

  • General-purpose low-power switching circuits
  • Small-signal amplification stages
  • Audio pre-amplifier designs

Procurement Notes

Verify the specific manufacturer designation when sourcing, as the 2N5817 number may refer to different semiconductor types across various vendors. Confirm that the selected unit matches the required NPN configuration and TO-92-3 physical dimensions. Ensure compliance with RoHS directives if lead-free assembly is mandated for the target production environment.

Selection Notes

Select this component for applications requiring moderate voltage handling and low current output. Consider the thermal resistance and power dissipation limits when designing heat management strategies. Evaluate the transition frequency requirements against the 200 MHz specification to ensure adequate performance for the intended signal bandwidth.

Part Context

This part belongs to the family of small-signal bipolar transistors manufactured by Central Semiconductor Corp. It serves as a fundamental active component in discrete electronics, often replacing older germanium or early silicon variants. The TO-92-3 package remains a standard form factor for prototyping and consumer electronics manufacturing.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Cross-referencing requires consulting official manufacturer substitution guides to ensure pinout and electrical parameter compatibility.

2N5817 PBFREE2N5817 PBFREE
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