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The Central Semiconductor Corp 2N5817 PBFREE is a single NPN bipolar junction transistor (BJT) designed for general-purpose switching and amplification applications. It features a collector-emitter voltage rating of 25 V and a continuous collector current capacity of 100 mA. The device operates within a junction temperature range of -65°C to 150°C, providing robust thermal performance. Packaged in a TO-92-3 through-hole configuration, it offers a transition frequency of 200 MHz and a maximum power dissipation of 625 mW. This component is suitable for low-power electronic circuits requiring reliable signal processing.
Verify the specific manufacturer designation when sourcing, as the 2N5817 number may refer to different semiconductor types across various vendors. Confirm that the selected unit matches the required NPN configuration and TO-92-3 physical dimensions. Ensure compliance with RoHS directives if lead-free assembly is mandated for the target production environment.
Select this component for applications requiring moderate voltage handling and low current output. Consider the thermal resistance and power dissipation limits when designing heat management strategies. Evaluate the transition frequency requirements against the 200 MHz specification to ensure adequate performance for the intended signal bandwidth.
This part belongs to the family of small-signal bipolar transistors manufactured by Central Semiconductor Corp. It serves as a fundamental active component in discrete electronics, often replacing older germanium or early silicon variants. The TO-92-3 package remains a standard form factor for prototyping and consumer electronics manufacturing.
Public confirmed substitute part numbers are not available in the provided documentation. Cross-referencing requires consulting official manufacturer substitution guides to ensure pinout and electrical parameter compatibility.