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The Central Semiconductor Corp 2N5818 TRE TIN/LEAD is a silicon planar mesa photodiode designed for light detection applications. It features a hermetically sealed glass-to-metal case construction to ensure environmental stability and long-term reliability. The device operates with a reverse bias voltage capability of 30V and maintains a low dark current of 1nA at that voltage. Its spectral response peaks in the visible spectrum, specifically around 640nm, making it suitable for optical sensing tasks requiring high sensitivity to red light wavelengths.
Verify the specific suffix 'TRE TIN/LEAD' against the manufacturer's official datasheet to confirm lead finish and tape-and-reel packaging specifications. Ensure the component meets RoHS compliance requirements if applicable to your assembly process. Cross-reference the part number with authorized distributors to confirm availability and authenticity before procurement.
Select this component when a hermetically sealed photodiode with visible spectrum sensitivity is required. The 30V reverse voltage rating provides adequate headroom for standard operational biases. Consider the TO-5 or similar metal can package constraints for PCB layout and mechanical mounting requirements in your design.
This component belongs to the 2N5818 series of silicon photodiodes manufactured by Central Semiconductor. These devices are engineered for robust performance in harsh environments due to their sealed construction. The series is commonly utilized in industrial and scientific instrumentation where consistent optical response is critical.
Publicly confirmed substitute part numbers for this specific variant are not available in the provided documentation. Verify compatibility with equivalent hermetically sealed silicon photodiodes from other manufacturers based on spectral response and package dimensions.