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Product Detailed Parameters
- Description：60V 750MA 625MW TH TRANSISTOR-SM
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Tape & Box (TB)
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：750 mA
- Voltage - Collector Emitter Breakdown (Max)：60 V
- Vce Saturation (Max) @ Ib, Ic：750mV @ 50mA, 500mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 2mA, 2V
- Power - Max：1.5 W
- Frequency - Transition：120MHz
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package：TO-92-3
- Grade：-
- Qualification：-
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Overview
The 2N5822 APM TIN/LEAD is a single NPN bipolar junction transistor (BJT) manufactured by Central Semiconductor Corp. Designed for through-hole mounting in TO-92-3 packages, this silicon device supports a collector-emitter voltage of 60V and a continuous collector current of 750mA. It features a transition frequency of 120MHz and a maximum power dissipation of 1.5W. The component operates within a junction temperature range of -65°C to 150°C, offering a minimum DC current gain of 100 at specified test conditions.
Feature Summary
- Utilizes silicon planar technology for reliable medium-power switching and amplification applications.
- Provides complementary pairing capability with the 2N5823 PNP transistor for push-pull circuit designs.
- Features a standard TO-92-3 through-hole package suitable for general-purpose electronic assemblies.
Applications
- Audio frequency amplifier stages
- General-purpose switching circuits
- Complementary push-pull output stages
Procurement Notes
Verify that the specific ordering suffix matches the required lead time and packaging configuration. Confirm RoHS compliance status relative to project requirements, as tin/lead variants may differ from lead-free specifications. Ensure the procurement channel provides valid traceability documentation for the Central Semiconductor manufacturing batch. Cross-reference the exact part number against distributor listings to confirm availability and standard factory lead times before finalizing orders.
Selection Notes
Select this component when a low-cost, through-hole NPN transistor is required for audio or general-purpose applications. Consider the 120MHz transition frequency and 1.5W power rating for suitability in medium-power tasks. Evaluate the complementary nature with the 2N5823 if balanced pair performance is necessary. Verify that the TO-92-3 package dimensions fit the target PCB layout constraints and thermal management requirements.
Part Context
This part belongs to the Central Semiconductor 2N5822/5823 series, which comprises complementary silicon AF medium power transistors. The 2N5822 serves as the NPN counterpart to the 2N5823 PNP transistor. Both devices share similar electrical characteristics and are designed for use in audio frequency applications and general-purpose switching circuits where through-hole mounting is preferred.
Replacement Considerations
The 2N5823 APM PBFREE is listed as a parameter-equivalent alternative by distributors, though it represents the complementary PNP device rather than an identical replacement. No other direct NPN substitutes are explicitly confirmed in the provided source data. Verify pinout compatibility and electrical parameters when considering any cross-referenced components.
