2N5823 TIN/LEAD

$1.47

Description：60V 750MA 625MW TH TRANSISTOR-SM
Series：-

SKU:f347fa99602c Category: Single Bipolar Transistors Brand: Central Semiconductor Corp

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Product introduction

Product Detailed Parameters

Description：60V 750MA 625MW TH TRANSISTOR-SM
Series：-
Mfr：Central Semiconductor Corp
Package：Box
Transistor Type：PNP
Current - Collector (Ic) (Max)：750 mA
Voltage - Collector Emitter Breakdown (Max)：60 V
Vce Saturation (Max) @ Ib, Ic：750mV @ 50mA, 500mA
Current - Collector Cutoff (Max)：100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 2mA, 2V
Power - Max：1.5 W
Frequency - Transition：120MHz
Operating Temperature：-65°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package：TO-92-3
Grade：-
Qualification：-

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2N5823 TIN/LEAD

Overview

The Central Semiconductor Corp 2N5823 TIN/LEAD is a PNP silicon small signal transistor manufactured via the epitaxial planar process. It features a maximum continuous collector current of 750 mA and a collector-emitter breakdown voltage of 60 V. The device operates within a junction temperature range of -65°C to +150°C and utilizes a TO-92-18R case with lead code 1) Collector, 2) Base, 3) Emitter.

Feature Summary

Complementary PNP silicon transistor designed for general-purpose amplifier applications requiring high collector current ratings.
Epoxy molded construction utilizing an epitaxial planar manufacturing process.

Applications

General purpose amplifier circuits
High collector current switching applications

Procurement Notes

Verify the specific plating requirement when ordering. The suffix TIN/LEAD indicates Tin/Lead plated devices, while PBFREE denotes Lead-free options. Confirm availability directly with Central Semiconductor or authorized distributors as stock levels vary. Ensure the TO-92-18R package orientation matches the design schematic pinout.

Selection Notes

Select this component for designs requiring a PNP transistor with a 750 mA collector current capability and a 60 V collector-emitter voltage rating. Consider the 120 MHz transition frequency for relevant signal frequencies. Verify thermal management requirements against the specified power dissipation limits in free air versus mounted conditions.

Part Context

This part belongs to the 2N5822/5823 complementary pair series from Central Semiconductor. The 2N5823 serves as the PNP counterpart to the NPN 2N5822. Both are epoxy molded small signal transistors intended for similar general-purpose amplifier roles where matched characteristics may be beneficial.