2N5823 TRE TIN/LEAD

$1.47

Description：60V 750MA 625MW TH TRANSISTOR-SM
Series：-

SKU:0a4691517e57 Category: Single Bipolar Transistors Brand: Central Semiconductor Corp

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Product introduction

Product Detailed Parameters

Description：60V 750MA 625MW TH TRANSISTOR-SM
Series：-
Mfr：Central Semiconductor Corp
Package：Tape & Reel (TR)
Transistor Type：PNP
Current - Collector (Ic) (Max)：750 mA
Voltage - Collector Emitter Breakdown (Max)：60 V
Vce Saturation (Max) @ Ib, Ic：750mV @ 50mA, 500mA
Current - Collector Cutoff (Max)：100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 2mA, 2V
Power - Max：1.5 W
Frequency - Transition：120MHz
Operating Temperature：-65°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package：TO-92-3
Grade：-
Qualification：-

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2N5823 TRE TIN/LEAD

Overview

The 2N5823 is a PNP bipolar junction transistor manufactured by Central Semiconductor Corp. It features a maximum collector-emitter voltage of 60 V and a continuous collector current rating of 750 mA. The device has a transition frequency of 120 MHz and a maximum power dissipation of 1.5 W. It is housed in a TO-92-3 through-hole package with a tin/lead finish. The component operates within a temperature range of -65°C to 150°C TJ.

Feature Summary

PNP polarity configuration for general-purpose switching and amplification
Through-hole mounting capability in a standard TO-92-3 leaded package
High transition frequency suitable for RF applications up to 120 MHz

Applications

General-purpose amplifier circuits
Electronic switching applications
RF signal processing stages

Procurement Notes

Verify the specific ordering suffix against manufacturer documentation, as variations such as APM or PBFREE may exist. Confirm RoHS compliance status and packaging format requirements prior to purchase. Ensure the tin/lead terminal finish aligns with assembly specifications. Cross-reference datasheet parameters to validate suitability for the intended electrical environment.

Selection Notes

Select this component when a PNP BJT with 60 V breakdown and 750 mA current capacity is required. The TO-92-3 package supports manual or wave soldering processes. Verify thermal management needs given the 1.5 W power dissipation limit. Consider the 120 MHz transition frequency for high-speed signal integrity requirements in the target circuit design.

Part Context

This part belongs to the Central Semiconductor discrete semiconductor product line, specifically within the bipolar junction transistor category. It serves as a replacement or alternative for legacy PNP transistors in industrial and consumer electronics. The manufacturer provides comprehensive technical documentation including electrical characteristics and mechanical drawings for integration support.