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The Microchip Technology 2N5861 is a silicon NPN power transistor designed for high-voltage applications. It features a maximum collector-emitter voltage of 100 V and can handle a continuous collector current of 2 A. The device utilizes a metal cylindrical TO-39 package with three pins, ensuring robust thermal performance. It operates within a temperature range extending up to +175 °C, making it suitable for demanding environments requiring reliable switching or amplification capabilities.
Verify the specific manufacturer suffix and date code upon ordering, as legacy part numbers may have multiple production sources. Confirm RoHS compliance status if required by your assembly process, noting that older revisions may differ from current manufacturing standards. Ensure the TO-39 pinout matches your schematic design before integration.
Select this component when a rugged, through-hole NPN transistor is needed for voltages up to 100 V. The TO-39 package offers superior heat dissipation compared to plastic equivalents. Consider the 2 A current limit and ensure adequate heatsinking for sustained operation near maximum ratings to maintain reliability over the specified temperature range.
This device belongs to the family of discrete silicon power transistors manufactured by Microchip Technology. It serves as a replacement for legacy components in existing designs requiring high-voltage NPN switching. The TO-39 metal case provides environmental protection and efficient thermal transfer, distinguishing it from lower-power plastic-packaged alternatives.
Direct substitutes include other 100 V, 2 A NPN transistors in TO-39 packages such as the 2N3055 series variants, provided pinouts match. Verify that alternative parts meet the same thermal and voltage specifications to ensure circuit compatibility without redesign.