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The Microchip Technology 2N5867 is a silicon PNP bipolar junction transistor designed for power applications. It features a TO-3 hermetically sealed case and supports through-hole mounting. Key electrical parameters include a collector-emitter voltage of 60V, a collector current rating of 5A, and a maximum power dissipation of 87.5W. The device exhibits a transition frequency of 4 MHz and low collector saturation voltage, making it suitable for medium-speed switching and amplifier circuits.
Verify the manufacturer origin carefully, as the component is listed under both SavantIC and Microchip Technology in public records. Confirm the specific datasheet version to ensure accurate absolute maximum ratings and pin configurations. Check for any ordering suffixes that might indicate variations in thermal resistance or packaging specifications before finalizing procurement orders.
Select this component when a high-power PNP transistor with a robust TO-3 metal case is required. Ensure the application voltage does not exceed 60V and current requirements stay within the 5A limit. Consider the 87.5W power dissipation capability and the need for adequate heat sinking due to the through-hole mounting style and physical size constraints.
This part belongs to the family of silicon PNP power transistors manufactured by Microchip Technology. It shares functional similarities with the 2N5868 but differs in specific voltage ratings. The TO-3 package provides superior thermal performance compared to plastic packages, supporting its use in high-power environments where reliability and heat management are critical design factors.
Public confirmed substitute part numbers are not available in the provided documentation.