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Product Detailed Parameters
- Description：PNP POWER TRANSISTOR SILICON AMP
- Series：*
- Mfr：Microchip Technology
- Package：Bulk
- Transistor Type：-
- Current - Collector (Ic) (Max)：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Vce Saturation (Max) @ Ib, Ic：-
- Current - Collector Cutoff (Max)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- Power - Max：-
- Frequency - Transition：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
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Overview
The 2N5876 is a high-power silicon PNP transistor manufactured by Microchip Technology. It is designed for applications requiring significant current handling and power dissipation capabilities. The device features a robust construction suitable for demanding electronic circuits.
Feature Summary
- High power capability
- Silicon PNP structure
Applications
- Power switching circuits
- Amplifier stages
- General purpose high-power applications
Procurement Notes
Verify the manufacturer origin carefully, as the 2N5876 designation is historically associated with multiple semiconductor vendors including TT Electronics and Mospec. Confirm that the specific unit supplied matches the required electrical specifications and package style, as variations exist across different producers. Ensure compatibility with your design requirements before procurement.
Selection Notes
Select this component when a high-power PNP transistor is required. Consider the thermal management needs due to its power rating. Verify the pinout and package dimensions against your PCB layout. Compare performance characteristics with alternative high-power transistors if specific parameters are critical.
Part Context
The 2N5876 belongs to the category of high-power bipolar junction transistors. It is commonly used in industrial and consumer electronics where reliable power switching or amplification is necessary. The part number follows the JEDEC naming convention for general-purpose transistors.
