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The Microchip Technology 2N5880 is a PNP bipolar junction transistor (BJT) housed in a TO-3 package. It features a maximum collector current of 15 A and a collector-emitter breakdown voltage of 80 V. The device supports a maximum power dissipation of 160 W and operates within a temperature range of -65 °C to +200 °C. Key electrical characteristics include a minimum DC current gain (hFE) of 20, an emitter-base voltage of 5 V, and a transition frequency of 4 MHz.
Verify the specific manufacturer source when procuring this component, as the 2N5880 designation is utilized by multiple semiconductor vendors including Central Semiconductor and Fairchild. Confirm that the received unit matches the required TO-3 package style and electrical specifications. Ensure compliance with RoHS requirements if applicable, noting that some variants may not be compliant. Cross-reference datasheets from the specific supplier to confirm pinout and absolute maximum ratings before integration.
Select the 2N5880 for circuits requiring high current handling and significant power dissipation capabilities. Its wide operating temperature range makes it suitable for demanding environments. Consider the TO-3 package constraints regarding mounting and thermal management infrastructure. Evaluate the 4 MHz transition frequency against signal speed requirements to ensure adequate bandwidth for the intended application.
The 2N5880 belongs to the class of silicon high-power transistors designed for robust industrial and commercial use. It is often paired with complementary NPN devices in push-pull configurations. The component represents a legacy standard in power electronics, frequently referenced in older amplifier designs and switching regulators where high reliability and thermal stability are critical.
Complementary counterparts such as the 2N5881 are available for differential circuit designs. Verify pin compatibility and thermal resistance values when substituting units from different manufacturers like Central Semiconductor or Fairchild.