2N5883

$35.01

Description：PNP POWER TRANSISTOR SILICON AMP
Series：*

SKU:c50bb98ddcd7 Category: Single Bipolar Transistors Brand: Microchip Technology

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：PNP POWER TRANSISTOR SILICON AMP
Series：*
Mfr：Microchip Technology
Package：Bulk
Transistor Type：-
Current - Collector (Ic) (Max)：-
Voltage - Collector Emitter Breakdown (Max)：-
Vce Saturation (Max) @ Ib, Ic：-
Current - Collector Cutoff (Max)：-
DC Current Gain (hFE) (Min) @ Ic, Vce：-
Power - Max：-
Frequency - Transition：-
Operating Temperature：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-

Download product information

2N5883

Overview

The 2N5883 is a high-power silicon PNP transistor designed for general-purpose power amplifier and switching applications. It features a hermetic TO-3 metal package suitable for robust industrial environments. Key electrical characteristics include a maximum collector current of 25A and a collector-emitter voltage rating of 60V to 80V depending on the specific manufacturer variant. The device exhibits low collector-emitter saturation voltage, typically 1.0V max at 15A, ensuring efficient operation in linear and switching modes.

Feature Summary

Hermetic TO-3 metal package construction
Low collector-emitter saturation voltage
Complementary design with NPN variants

Applications

General-purpose power amplifiers
High-current switching circuits
Linear regulation applications

Procurement Notes

Verify the specific voltage rating (60V or 80V) and manufacturer origin, as multiple vendors produce this legacy part number. Confirm package authenticity and pinout compatibility with original TO-3 specifications. Ensure the selected component meets the required thermal dissipation standards for your enclosure. Check for complementary NPN pair availability if designing balanced output stages.

Selection Notes

Select based on required collector current capacity and voltage headroom. The TO-3 package requires appropriate mounting hardware and thermal interface materials. Consider the complementary 2N5885/2N5886 NPN transistors for push-pull configurations. Verify DC current gain requirements against load conditions. Ensure heat sinking solutions accommodate the 200W power dissipation potential under proper thermal management.

Part Context

This component belongs to a family of complementary silicon epitaxial base transistors originally developed for high-power audio and RF amplification. The series includes matching NPN counterparts like the 2N5885 and 2N5886. These devices were widely used in vintage professional audio equipment and industrial power supplies before modern MOSFET adoption.