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The onsemi 2N5884G is a PNP silicon high-power transistor designed for general-purpose power amplifier and switching applications. It features an 80 V collector-emitter voltage rating, a continuous collector current of 25 A, and a peak current capability of 50 A. The device offers a maximum total device dissipation of 200 W at 25°C case temperature with a derating factor of 1.15 W/°C. Key electrical characteristics include a minimum DC current gain (hFE) of 20 at 10 A, a maximum collector-emitter saturation voltage of 1.0 V at 15 A, and a minimum current-gain bandwidth product of 4.0 MHz. It operates within a junction temperature range of -65°C to +200°C.
Verify the specific ordering suffix 'G' confirms the Pb-Free package status as documented in the official datasheet. Confirm the TO-204 (TO-3) mechanical outline matches the required mounting style. Ensure thermal management solutions account for the 1.15 W/°C derating curve above 25°C case temperature to maintain reliability within the specified junction temperature limits.
Select this component for applications requiring high current handling up to 25 A continuous operation. Consider the 80 V breakdown voltage for appropriate headroom in supply rails. Evaluate the thermal resistance of 0.875°C/W for heatsink design. Compare against complementary NPN devices like the 2N5886 if push-pull configurations are needed.
This part belongs to the 2N588x series of complementary silicon high-power transistors from onsemi. The series includes PNP types (2N5883, 2N5884) and NPN types (2N5885, 2N5886). The 2N5884 and 2N5886 are designated as Preferred Devices by the manufacturer, indicating recommended choices for future use and best overall value within the family.
The 2N5883 is the complementary PNP device within the same series but rated for 60 V instead of 80 V. For NPN replacement or complementary pairing, consider the 2N5886, which shares the 80 V rating and is also a Preferred Device.