2N5885

Overview

The 2N5885 is a power NPN silicon bipolar junction transistor manufactured by Microchip Technology. It is housed in a TO-3 metal can package with two pins. The device supports a collector current of 25A and offers a collector-emitter breakdown voltage of 60V. This component is classified as a discrete semiconductor transistor designed for high-power applications.

Feature Summary

• Utilizes a robust metal TO-3 package construction for effective thermal management
• Engineered as an NPN silicon bipolar junction transistor for power switching
• Supports high continuous collector current handling capabilities

Applications

• High-power linear regulation circuits
• Industrial motor control systems
• Power amplification stages

Procurement Notes

Verify the specific revision level and manufacturing date code upon receipt to ensure compliance with project requirements. Confirm that the TO-3 metal can package matches the designated footprint on the printed circuit board. Check for any lead-free or RoHS exemptions if environmental regulations apply to the final assembly, as indicated in official documentation.

Selection Notes

Select this component when a high-current NPN transistor with a TO-3 metal case is required. Ensure the thermal design accommodates the power dissipation characteristics inherent to the TO-3 package. Verify that the 60V breakdown voltage meets the maximum operating voltage of the target circuit without exceeding safe operating area limits.

Part Context

This part belongs to the family of power bipolar transistors produced by Microchip Technology. It serves as a discrete semiconductor solution for applications demanding significant current handling. The TO-3 metal can format distinguishes it from smaller plastic-packaged alternatives, offering superior heat dissipation for demanding power electronics designs.