2N5885G

Overview

The onsemi 2N5885G is an NPN silicon high-power transistor designed for general-purpose power amplifier and switching applications. It features a collector-emitter voltage of 60 Vdc, continuous collector current of 25 Adc, and peak current of 50 Adc. The device offers a maximum total device dissipation of 200 W at 25°C case temperature with a thermal resistance of 0.875 °C/W. Key electrical characteristics include a minimum DC current gain of 20 at 10 Adc, low leakage current, and a current-gain bandwidth product of 4.0 MHz.

Feature Summary

• Low collector-emitter saturation voltage
• Low leakage current
• Excellent DC current gain
• High current gain bandwidth product

Applications

• General-purpose power amplifiers
• Switching applications

Procurement Notes

Verify the ordering suffix 'G' indicates a lead-free package compliant with RoHS standards. Confirm the TO-204 (TO-3) metal can package style matches the circuit requirements. Ensure the component meets the specific environmental and reliability standards required by the final application design.

Selection Notes

Select this NPN transistor when a complementary pair with the 2N5884 PNP device is needed for push-pull configurations. Consider the 60 V collector-emitter rating and 25 A continuous current capability for high-power loads. Evaluate the thermal management needs given the 200 W dissipation limit and junction-to-case thermal resistance.

Part Context

This component belongs to the 2N588x series of complementary silicon high-power transistors manufactured by onsemi. The series includes PNP variants (2N5883, 2N5884) and NPN variants (2N5885, 2N5886). The 2N5885G specifically denotes the NPN version in a lead-free TO-204 package.

Replacement Considerations

The 2N5886 is the preferred NPN device within the same complementary family. For direct replacement, verify that the 80 V rating of the 2N5886 does not conflict with system constraints and that pinout compatibility remains consistent.