2N5886G

Description：TRANS NPN 80V 25A TO204
Series：-

SKU:6cc53e20c4c0 Category: Single Bipolar Transistors Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：TRANS NPN 80V 25A TO204
Series：-
Mfr：onsemi
Package：Tray
Transistor Type：NPN
Current - Collector (Ic) (Max)：25 A
Voltage - Collector Emitter Breakdown (Max)：80 V
Vce Saturation (Max) @ Ib, Ic：4V @ 6.25A, 25A
Current - Collector Cutoff (Max)：2mA
DC Current Gain (hFE) (Min) @ Ic, Vce：20 @ 10A, 4V
Power - Max：200 W
Frequency - Transition：4MHz
Operating Temperature：-65°C ~ 200°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-204AA, TO-3
Supplier Device Package：TO-204 (TO-3)
Grade：-
Qualification：-

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2N5886G

Overview

The onsemi 2N5886G is a high-power NPN silicon transistor designed for general-purpose power amplifier and switching applications. It features an 80 V collector-emitter voltage rating, a continuous collector current of 25 A, and a peak current capability of 50 A. The device dissipates up to 200 W at a case temperature of 25°C with a thermal resistance of 0.875°C/W. Key electrical characteristics include a minimum DC current gain of 20 at 10 A, a maximum collector-emitter saturation voltage of 1.0 V at 15 A, and a transition frequency of 4.0 MHz. It operates within a junction temperature range of -65°C to +200°C.

Feature Summary

Low collector-emitter saturation voltage for efficient conduction
High current gain bandwidth product for dynamic performance
Low leakage current under rated voltage conditions
Robust active-region safe operating area

Applications

General-purpose power amplifiers
Power switching circuits
Complementary high-power transistor pairs

Procurement Notes

Verify the datasheet revision and ordering information directly from official sources before procurement. Confirm that the TO-204 package dimensions match the required mechanical constraints. Ensure thermal management solutions account for the specified derating curve above 25°C. Validate compliance with RoHS standards if lead-free packaging is strictly required for the assembly process.

Selection Notes

Select this component when designing circuits requiring high current handling and robust voltage ratings in a through-hole configuration. Consider the complementary 2N5884G PNP transistor for push-pull or bridge amplifier topologies. Evaluate the thermal resistance and safe operating area curves to ensure reliable operation under expected load conditions and ambient temperatures.

Part Context

The 2N5886G belongs to the 2N588x series of complementary silicon high-power transistors manufactured by onsemi. This family includes both NPN (2N5885/2N5886) and PNP (2N5883/2N5884) variants. The 2N5886G is designated as a Preferred Device, indicating it is recommended for future use and offers optimal value within the lineup.