2N5950

Overview

The onsemi 2N5950 is an N-Channel RF Amplifier JFET designed primarily for electronic switching applications, such as low on-resistance analog switching. It features a TO-92-3 package with through-hole mounting. Key electrical parameters include a Drain-Gate Voltage of 30 V and a Gate-Source Voltage of -30 V. The device operates within a junction temperature range of -55°C to 150°C. Electrical characteristics specify a Gate-Source Cut-off Voltage between -2.5 V and -6.0 V, and a Zero-Gate Voltage Drain Current ranging from 10 mA to 15 mA at 15 V. The Drain-Source On Resistance is 210 Ω at 476 μA. Small signal characteristics include a Forward Transfer Conductance of 3000 μ/Ω at 100 MHz and an Input Capacitance of 6 pF.

Feature Summary

• Designed for electronic switching applications requiring low on-resistance analog switching capabilities.
• Utilizes process technology sourced from Fairchild Semiconductor's manufacturing lines.

Applications

• Electronic switching circuits
• Low on-resistance analog switching

Procurement Notes

Verify the specific manufacturer origin, as the component was originally produced by Fairchild Semiconductor before its acquisition by onsemi. Confirm the part status, which may be listed as obsolete or not in production depending on current inventory channels. Ensure that the datasheet revision matches the required specifications for the design, noting that final specifications are subject to change without notice by the manufacturer.

Selection Notes

Select this component when a low on-resistance N-Channel JFET is required for analog switching applications. Consider the thermal resistance values and maximum power dissipation limits when designing heat management strategies. Verify that the operating voltage and current requirements fall within the specified absolute maximum ratings and electrical characteristics provided in the official documentation.

Part Context

The 2N5950 is an N-Channel RF Amplifier JFET originally manufactured by Fairchild Semiconductor. It is housed in a TO-92-3 package. The device is characterized by its use in electronic switching and low on-resistance analog switching applications. It offers specific small-signal characteristics suitable for radio frequency contexts.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source material. Consult the manufacturer or authorized distributors for alternative components if the 2N5950 is no longer in production.

FAQ

What is the primary application of the 2N5950?

The 2N5950 is designed primarily for electronic switching applications, such as low on-resistance analog switching.

What is the maximum Drain-Gate Voltage for the 2N5950?

The maximum Drain-Gate Voltage (VDG) for the 2N5950 is 30 V.

What is the typical Input Capacitance of the 2N5950?

The Input Capacitance (Ciss) of the 2N5950 is 6 pF, measured at VDS = 15V, VGS = 0V, and f = 1.0MHz.