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The onsemi 2N5950_J35Z is an N-Channel RF Amplifier JFET in a TO-92-3 package. It features a Drain-Gate Voltage of 30 V and Gate-Source Voltage of -30 V, with an operating junction temperature range from -55°C to 150°C. The device has a total device dissipation of 350 mW at 25°C. Electrical characteristics include a Gate-Source Cut-off Voltage (VGS(off)) ranging from -2.5 V to -6.0 V, and a Zero-Gate Voltage Drain Current (IDSS) between 10 mA and 15 mA at 15 V. Small signal parameters show an Input Capacitance (Ciss) of 6 pF and Reverse Transfer Capacitance (Crss) of 2 pF at 1.0 MHz.
Verify the current manufacturing status before procurement planning. The component is listed as obsolete by Fairchild Semiconductor and subsequently acquired by onsemi. Confirm availability through authorized distributors or alternative sourcing channels. Ensure that the specific ordering suffix matches the required package and environmental specifications for the intended application.
Select this component for designs requiring an N-Channel JFET with specific RF amplifier characteristics. Consider the absolute maximum ratings, particularly the 30 V voltage limits and thermal resistance values. Evaluate the electrical parameters such as IDSS and VGS(off) against circuit requirements. Verify compatibility with the TO-92-3 package for through-hole mounting.
The 2N5950 is an N-Channel RF Amplifier originally manufactured by Fairchild Semiconductor. The part number 2N5950_J35Z indicates a specific variant within the product line. Fairchild Semiconductor was later acquired by onsemi, which now manages the product portfolio. This component belongs to the discrete semiconductor category, specifically RF FETs and MOSFETs.
Check for direct equivalents from other manufacturers offering similar N-Channel JFET specifications. Verify pinout compatibility and electrical parameter overlaps. Consider the obsolete status when evaluating long-term supply chain stability for replacement options.