2N5951

Overview

The onsemi 2N5951 is an N-Channel RF Amplifier designed primarily for electronic switching applications, such as low on-resistance analog switching. It operates within a drain-gate voltage range of -30 V to 30 V and a gate-source voltage range of -30 V. The device features a maximum total device dissipation of 350 mW at 25°C ambient temperature, with a thermal resistance junction-to-case of 125 °C/W. Electrical characteristics include a zero-gate voltage drain current (IDSS) ranging from 7 mA to 13 mA at VDS = 15 V, and a drain-source on-resistance (RDS(on)) of up to 250 Ω at ID = 400 μA. Input capacitance is specified at 6 pF.

Feature Summary

• Designed for electronic switching applications requiring low on-resistance analog switching capabilities
• Utilizes process 50 sourcing technology for consistent performance
• Operates reliably across a wide junction temperature range from -55°C to 150°C

Applications

• Low on-resistance analog switching circuits
• Electronic switching applications in RF systems
• Signal routing in high-frequency environments

Procurement Notes

Verify the specific manufacturer origin, as the component was originally produced by Fairchild Semiconductor before its acquisition by onsemi. Confirm package type availability, typically TO-92, and check for RoHS compliance status depending on the production batch. Ensure the datasheet revision matches the required specifications for your design, as older revisions may contain preliminary or superseded data.

Selection Notes

Select this component when a low on-resistance N-channel JFET is required for analog switching rather than linear amplification. Consider the 250 Ω RDS(on) limit for signal integrity requirements. Evaluate the 350 mW power dissipation against your thermal management capabilities. Verify that the -30 V gate-source voltage rating aligns with your control circuitry limits.

Part Context

The 2N5951 belongs to the family of N-Channel RF Amplifiers historically manufactured by Fairchild Semiconductor. Following corporate acquisitions, these products are now managed under the onsemi portfolio. This specific part number represents a standard discrete semiconductor device used in radio frequency and analog switching contexts, distinct from higher-power power MOSFETs.

Replacement Considerations

Check for direct equivalents from other manufacturers offering similar N-Channel JFET specifications in a TO-92 package. Verify pinout compatibility (Gate, Source, Drain) and ensure electrical parameters like V(BR)GSS and IDSS fall within acceptable tolerances for your specific application.