2N5951_J35Z

Overview

The 2N5951_J35Z is an N-channel RF JFET amplifier manufactured by onsemi. It features a Gate-Source Breakdown Voltage of -30 V and a Zero-Gate Voltage Drain Current ranging from 7 to 13 mA at 15V. The device exhibits a Drain-Source On Resistance of up to 250 Ω at 400μA. Small signal characteristics include an Input Capacitance of 6 pF and a Reverse Transfer Capacitance of 2 pF at 1.0 MHz. Total Device Dissipation is rated at 350 mW, with a Thermal Resistance Junction-to-Ambient of 357 °C/W.

Feature Summary

• Designed primarily for electronic switching applications such as low on resistance analog switching
• Sourced from process 50

Applications

• Electronic switching applications
• Low on resistance analog switching

Procurement Notes

Verify the manufacturer origin, as the component was originally produced by Fairchild Semiconductor before acquisition by onsemi. Confirm the RoHS compliance status through official documentation or distributor specifications. Ensure the TO-92-3 package matches the required mounting style for the target circuit design.

Selection Notes

Select this component for circuits requiring N-channel JFET amplification with specific breakdown voltage limits. Evaluate the thermal resistance parameters against the expected power dissipation in the application environment. Consider the input capacitance values when designing high-frequency signal paths.

Part Context

This part belongs to the 2N5951 series of N-channel RF amplifiers. It shares functional similarities with other devices in the same family but may differ in specific electrical tolerances or sourcing processes. The suffix indicates the specific packaging configuration used for distribution.

Replacement Considerations

Check for direct equivalents within the 2N595x series. Verify pinout compatibility and electrical parameter overlaps before substituting with other N-channel JFETs.