2N5952

Overview

The 2N5952 is an N-channel RF amplifier JFET manufactured by onsemi (formerly Fairchild Semiconductor). It operates with a Drain-Gate Voltage of 30 V and a Gate-Source Breakdown Voltage of -30 V. The device features a Zero-Gate Voltage Drain Current (IDSS) ranging from 4.0 mA to 8.0 mA at 15 V. Small signal characteristics include a Forward Transfer Conductance (gfs) between 2000 µmhos and 6500 µmhos at 1.0 kHz, and a Noise Figure of 2.0 dB. Thermal limits specify a total device dissipation of 350 mW and a junction temperature range of -55°C to +150°C.

Feature Summary

• Designed primarily for electronic switching applications such as low on resistance analog switching
• Optimized for RF amplifier functions with specified noise figure and forward transfer conductance metrics

Applications

• Electronic switching applications
• Low on resistance analog switching
• RF amplifier circuits

Procurement Notes

Verify the current manufacturer status before procurement, as the component was originally produced by Fairchild Semiconductor prior to its integration into onsemi. Confirm that the TO-92 package dimensions match the design requirements. Ensure compliance with RoHS directives if applicable to the specific production batch. Check for any process change notifications or product discontinuation notices that may affect long-term availability.

Selection Notes

Select this component when designing circuits requiring an N-channel JFET with high drain current capability around 8 mA. Consider the thermal resistance values for heat dissipation in enclosed environments. Verify that the operating frequency aligns with the capacitance specifications provided at 1.0 MHz. Ensure the gate-source voltage does not exceed the breakdown limit during operation.

Part Context

The 2N5952 belongs to the family of N-channel RF JFET transistors historically produced by Fairchild Semiconductor. Following corporate restructuring, these products are managed under the onsemi portfolio. The datasheet revision A1 indicates final production specifications were established in November 2002. This component serves as a discrete semiconductor solution for radio frequency and analog switching tasks.

Replacement Considerations

Consult official substitution guides for equivalent N-channel JFETs with similar IDSS and VGS(off) ranges. Verify pinout compatibility for the TO-92 package before replacing the component in existing designs.