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The 2N5956 is a power bipolar transistor manufactured by Microchip Technology. It is a PNP silicon device housed in a hermetically sealed metal TO-66 package. The component supports a maximum collector current of 6 A and a collector-emitter breakdown voltage of 45 V. It features a single-element configuration with two pins. The unit weighs approximately 310 mg, with physical dimensions of 2.16 mm diameter and 4.06 mm length.
Verify the manufacturer origin carefully as the 2N5956 designation is historically associated with TT Electronics. Confirm if the specific lot requires MIL-PRF-19500 screening or standard commercial qualification. Ensure the TO-66 metal package matches the mechanical constraints of the target assembly before finalizing procurement orders.
Select this component when high reliability and radiation hardness are required due to its hermetic metal packaging. The 45 V rating limits suitability for higher voltage applications. Consider the thermal management requirements for the 6 A current capacity within the TO-66 form factor compared to plastic alternatives.
This part belongs to the family of hermetically sealed power transistors designed for extreme environments. Unlike standard plastic packages, the metal TO-66 case provides superior thermal conductivity and protection against moisture and contaminants, making it suitable for defense and space-grade electronics where long-term stability is critical.
Direct replacements include other hermetically sealed PNP transistors in the TO-66 package such as the 2N5957 or equivalent military-spec parts from qualified manufacturers. Verify pinout compatibility and ensure the replacement meets the same 6 A and 45 V ratings.