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The 2N5959 is an NPN silicon bipolar junction transistor manufactured by Microchip Technology. It features a maximum collector current of 20 A and a collector-emitter breakdown voltage of 100 V. The device supports a maximum power dissipation of 175 W and operates within a junction temperature range of -65°C to 200°C. Available in stud mount packages including TO-211MA, TO-210AC, and TO-61-4, it is designed for high-power switching and amplification applications.
Verify the specific package variant (TO-211MA, TO-210AC, or TO-61-4) required for your mechanical design before ordering. Confirm that the supplier provides official Microchip Technology documentation to ensure component authenticity. Check for any recent product change notifications regarding manufacturing updates or material specifications.
Select this component when high current capacity and wide thermal tolerance are critical. Ensure the application voltage does not exceed the 100 V collector-emitter breakdown limit. Consider the stud mount mounting type for effective heat dissipation given the 175 W power rating.
This single NPN bipolar transistor belongs to Microchip Technology's discrete semiconductor lineup. It serves as a robust solution for power electronics requiring significant current handling. The part is distinct from Zener diodes or other transistor types within the manufacturer's catalog.
Public confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical ratings if considering alternative manufacturers.