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The onsemi 2N5961 is an NPN general-purpose amplifier transistor designed for low noise and high gain applications requiring collector currents up to 50 mA. It features a collector-emitter voltage of 60 V, continuous collector current of 100 mA, and total device dissipation of 625 mW at 25°C. The device operates within a junction temperature range of -55°C to +150°C. Small-signal current gain ranges from 150 to 1000 at 10 mA, with a noise figure as low as 3.0 dB under specified conditions.
Verify the manufacturer origin, as Fairchild Semiconductor was acquired by onsemi. Confirm the package style matches the required TO-92 configuration. Check datasheet revisions to ensure electrical characteristics align with current design specifications. Validate that the component meets all absolute maximum ratings for your specific operating environment.
Select this component when low noise and high gain are prioritized over high power handling. Ensure the application stays within the 50 mA collector current limit for optimal performance. Consider the thermal resistance values if operating near the upper temperature limits. Compare small-signal parameters against alternative transistors if specific frequency response or noise floor requirements exist.
The 2N5961 belongs to the family of NPN general-purpose amplifiers, sharing characteristics with devices like the 2N5088. It is manufactured using Process 07 technology. The component is housed in a TO-92 package, available in bulk, tape, and reel configurations. It serves as a discrete semiconductor solution for analog signal processing tasks.
Consult the official datasheet for direct substitutes. The 2N5088 shares similar characteristics and is referenced in the documentation. Verify pinout compatibility and electrical parameter overlaps before implementing any replacement.
The absolute maximum continuous collector current is 100 mA, though it is designed for use with collector currents up to 50 mA.
Yes, the device is specifically designed for low noise applications, with a noise figure as low as 3.0 dB under standard test conditions.
The junction temperature range for operation and storage is -55°C to +150°C.