2N5962 APM TIN/LEAD

$0.16

Description：45V 50MA 625MW TH TRANSISTOR-SMA
Series：-

SKU:d08119e7a8ea Category: Single Bipolar Transistors Brand: Central Semiconductor Corp

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Product introduction

Product Detailed Parameters

Description：45V 50MA 625MW TH TRANSISTOR-SMA
Series：-
Mfr：Central Semiconductor Corp
Package：Tape & Box (TB)
Transistor Type：NPN
Current - Collector (Ic) (Max)：50 mA
Voltage - Collector Emitter Breakdown (Max)：45 V
Vce Saturation (Max) @ Ib, Ic：200mV @ 500µA, 10mA
Current - Collector Cutoff (Max)：2nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：600 @ 10mA, 5V
Power - Max：1.5 W
Frequency - Transition：100MHz
Operating Temperature：-65°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package：TO-92-3
Grade：-
Qualification：-

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2N5962 APM TIN/LEAD

Overview

The Central Semiconductor Corp 2N5962 APM TIN/LEAD is a general-purpose NPN bipolar junction transistor (BJT) designed for through-hole mounting. It features a maximum collector-emitter voltage of 45 V and a continuous collector current rating of 100 mA. The device dissipates up to 625 mW of power within an operating temperature range of -55°C to +150°C. Key electrical characteristics include a minimum DC current gain of 600 at 10 mA and 5 V, with a collector cutoff current of 2 nA.

Feature Summary

High DC current gain suitable for amplification applications
Wide operating temperature range for harsh environments
General-purpose NPN configuration

Applications

General purpose switching circuits
Amplifier stages
Signal processing

Procurement Notes

Verify the specific ordering suffix 'APM TIN/LEAD' against the manufacturer's official datasheet to confirm lead-free plating specifications and package dimensions. Ensure compatibility with existing PCB footprints and thermal management requirements before finalizing procurement decisions.

Selection Notes

Select this component when a high-gain NPN transistor is required for low-power general-purpose applications. Consider the TO-92-3 package constraints and the 625 mW power dissipation limit relative to the expected thermal environment and heat sinking capabilities in the target design.

Part Context

This part belongs to the standard NPN BJT category from Central Semiconductor Corp. It serves as a discrete semiconductor solution for basic electronic circuitry, distinct from integrated circuits or power transistors. The designation indicates a specific manufacturing variant within the broader 2N5962 product line.