2N5962 TRE PBFREE

$0.14

Description：45V 50MA 625MW TH TRANSISTOR-SMA
Series：-

SKU:511649ef73fb Category: Single Bipolar Transistors Brand: Central Semiconductor Corp

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Product introduction

Product Detailed Parameters

Description：45V 50MA 625MW TH TRANSISTOR-SMA
Series：-
Mfr：Central Semiconductor Corp
Package：Tape & Reel (TR)
Transistor Type：NPN
Current - Collector (Ic) (Max)：50 mA
Voltage - Collector Emitter Breakdown (Max)：45 V
Vce Saturation (Max) @ Ib, Ic：200mV @ 500µA, 10mA
Current - Collector Cutoff (Max)：2nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：600 @ 10mA, 5V
Power - Max：1.5 W
Frequency - Transition：100MHz
Operating Temperature：-65°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package：TO-92-3
Grade：-
Qualification：-

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2N5962 TRE PBFREE

Overview

The Central Semiconductor Corp 2N5962 TRE PBFREE is an NPN silicon epitaxial planar transistor designed for general-purpose amplifier applications. It features a collector-emitter voltage of 45V and a continuous collector current of 50mA, with a transition frequency of 100MHz. The device dissipates 1.5W of power in a TO-92-3 through-hole package. DC current gain ranges from 420 to 800 at VCE=5V and IC=2mA. Collector-emitter saturation voltage is 0.3V max at IC=100mA and IB=5mA.

Feature Summary

Epoxy molded construction utilizing epitaxial planar process technology
Designed for general-purpose amplification tasks
Through-hole mounting configuration

Applications

General-purpose amplifier circuits
Low-power circuit designs requiring electrical isolation

Procurement Notes

Verify the specific ordering suffix required for lead-free compliance. Add the suffix "PBFREE" to the part number when requesting lead-free plated devices. Confirm that the component is not intended for use as a critical component in life support systems or FDA Class 3 medical devices. Ensure the package type matches the application requirements before finalizing procurement orders.

Selection Notes

Select this component for applications requiring moderate voltage handling and high current gain. The TO-92-3 package suits through-hole assembly processes. Consider the 100MHz transition frequency for signal amplification needs. Evaluate the 1.5W power dissipation capability against thermal constraints. Verify compatibility with standard biasing networks for general-purpose operations.

Part Context

This transistor belongs to the 2N5961 series manufactured by Central Semiconductor Corp. The series includes variants such as the 2N5961 and 2N5963. These components are silicon NPN transistors produced via the epitaxial planar process. They are epoxy molded devices intended for robust electronic applications.