2N5962_D74Z

$0.05

Description：TRANS NPN 45V 0.1A TO-92-3
Series：-

SKU:17857f4eacc9 Category: Single Bipolar Transistors Brand: onsemi

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：TRANS NPN 45V 0.1A TO-92-3
Series：-
Mfr：onsemi
Package：Tape & Box (TB)
Transistor Type：NPN
Current - Collector (Ic) (Max)：100 mA
Voltage - Collector Emitter Breakdown (Max)：45 V
Vce Saturation (Max) @ Ib, Ic：200mV @ 500µA, 10mA
Current - Collector Cutoff (Max)：2nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：600 @ 10mA, 5V
Power - Max：625 mW
Frequency - Transition：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package：TO-92-3
Grade：-
Qualification：-

Download product information

2N5962_D74Z

Overview

The onsemi 2N5962_D74Z is an NPN general-purpose amplifier transistor manufactured in a TO-92-3 through-hole package. It features a collector-emitter voltage of 45 V and a continuous collector current rating of 100 mA. The device provides a minimum DC current gain of 600 at 10 mA and 5 V, with a maximum power dissipation of 625 mW. It operates within a junction temperature range of -55°C to +150°C.

Feature Summary

Designed for low noise applications requiring high gain
Suitable for general purpose amplification tasks
Capable of handling collector currents up to 50 mA

Applications

Low noise amplifiers
High gain general purpose amplifiers

Procurement Notes

Verify the obsolete status of this component before finalizing designs. Confirm that the D74Z suffix corresponds to the Ammo Pack option as specified in the datasheet. Ensure compatibility with existing TO-92 footprints and validate thermal management requirements against the 625 mW dissipation limit.

Selection Notes

Select this part when a high-gain NPN transistor is required for low-noise signal processing. Compare its 600 hFE minimum against alternatives if higher linearity or lower saturation voltage is needed. Consider the TO-92 package constraints for board space and verify that the 45 V breakdown voltage meets circuit requirements.

Part Context

This component belongs to the 2N5962 series of NPN transistors sourced from Process 07. It shares characteristics with the 2N5088 and is often grouped with MMBT5962 variants. The device is historically associated with Fairchild Semiconductor specifications now managed by onsemi.