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The 2N5963 TRE PBFREE is an NPN silicon small-signal bipolar junction transistor manufactured by Central Semiconductor Corp. It features a collector-emitter voltage (Vceo) of 30 V and a continuous collector current rating of 50 mA. The device has a maximum power dissipation of 1.5 W in through-hole configurations, with a transition frequency of 150 MHz. It operates within a junction temperature range of -65°C to +150°C. The component is supplied in a TO-92-3 package and is RoHS compliant.
Verify the specific suffix 'TRE' against the manufacturer's official datasheet to confirm tape-and-reel packaging specifications. Ensure the ordering quantity aligns with the required reel size. Confirm that the RoHS compliance status matches project requirements. Cross-reference the part number with authorized distributors to ensure authenticity and traceability before finalizing procurement.
Select this component when a high-gain NPN transistor is required for low-noise applications. The 30 V collector-emitter voltage and 50 mA current rating define its operational limits. Consider the TO-92 package for through-hole mounting constraints. Evaluate the 150 MHz transition frequency against the target circuit speed requirements to ensure adequate performance margins.
This part belongs to the Central Semiconductor 2N5963 family of NPN silicon transistors. Variants such as 2N5963 PBFREE share similar electrical characteristics but may differ in packaging or lead finish. The 2N5963 series is designed for general-purpose small-signal applications requiring reliable performance across wide temperature ranges.
Direct substitutes include other 2N5963 variants like 2N5963 PBFREE, provided the packaging and lead-free status match the design requirements. Verify pinout compatibility and electrical parameters before substitution.