2N6034 PBFREE

Overview

The Central Semiconductor Corp 2N6034 PBFREE is a silicon PNP general-purpose power transistor housed in a TO-126 package. It functions as a Darlington device designed for high DC current gain applications. Key electrical ratings include a collector-base voltage of 80 V, a collector-emitter voltage of 50 V, and a continuous collector current of 4 A. The component supports a maximum power dissipation of 75 W and operates within a junction temperature range of -65°C to +150°C.

Feature Summary

• Darlington configuration providing high DC current gain
• Designed for general-purpose amplifier applications
• Suitable for low-speed switching operations

Applications

• General-purpose amplification circuits
• Low-speed switching applications

Procurement Notes

Verify the specific manufacturer source, as datasheet availability varies between Central Semiconductor and SavantIC. Confirm RoHS compliance status for the PBFREE designation. Ensure the TO-126 pinout matches the design requirements before integration. Check for any specification discrepancies regarding absolute maximum ratings across different supplier documentation.

Selection Notes

Select this component when high current gain is required for PNP power switching or amplification. The TO-126 package facilitates through-hole mounting with adequate thermal management for 75 W dissipation. Consider the 50 V collector-emitter rating against circuit voltage peaks. Evaluate the Darlington structure's saturation voltage impact on efficiency compared to single-transistor alternatives.

Part Context

This part belongs to the 2N60xx series of silicon PNP power transistors. It serves as a complement to types such as the 2N6037, 2N6038, and 2N6039. The series is characterized by its ability to handle significant power levels while maintaining stable performance in standard industrial environments.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided data.