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Product Detailed Parameters
- Description：TRANS PNP DARL 40V 4A TO-126
- Series：-
- Mfr：onsemi
- Package：Bulk
- Transistor Type：PNP - Darlington
- Current - Collector (Ic) (Max)：4:00 AM
- Voltage - Collector Emitter Breakdown (Max)：40 V
- Vce Saturation (Max) @ Ib, Ic：3V @ 40mA, 4A
- Current - Collector Cutoff (Max)：100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce：750 @ 2A, 3V
- Power - Max：40 W
- Frequency - Transition：-
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-225AA, TO-126-3
- Supplier Device Package：TO-126
- Grade：-
- Qualification：-
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Overview
The onsemi 2N6034G is a PNP plastic Darlington complementary silicon power transistor designed for general-purpose amplifier and low-speed switching applications. It features a TO-225 package with a collector-emitter sustaining voltage of 40 Vdc, continuous collector current of 4.0 Adc, and peak collector current of 8.0 Apk. The device offers a DC current gain ranging from 100 to 15,000 at specified test conditions, with a total device dissipation of 40 W at 25°C case temperature. It operates within a junction temperature range of -65°C to +150°C.
Feature Summary
- Plastic Darlington complementary silicon construction
- High DC current gain capability
- ESD protection exceeding 400 V (Machine Model) and 8000 V (Human Body Model)
- Epoxy meets UL 94 V-0 flammability rating
Applications
- General purpose amplifier circuits
- Low-speed switching applications
Procurement Notes
Verify the specific suffix 'G' indicates a Pb-Free and RoHS compliant package configuration. Confirm the TO-225 mechanical outline matches the required mounting style. Ensure the 40 V collector-emitter voltage rating aligns with the circuit requirements, as this part is distinct from the 60 V and 80 V variants in the same series.
Selection Notes
Select this component when a high-gain PNP Darlington transistor is required for low-frequency amplification or switching tasks. Consider the thermal resistance characteristics and safe operating area limits for power dissipation management. Verify that the 40 V breakdown voltage is sufficient for the intended load, distinguishing it from higher voltage counterparts like the 2N6035 or 2N6036.
Part Context
This device belongs to a family of plastic Darlington complementary silicon power transistors manufactured by onsemi. It serves as the PNP counterpart to NPN devices such as the 2N6038 and 2N6039. The series is engineered for robust performance in standard industrial and consumer electronics applications requiring moderate power handling and high current gain.
Replacement Considerations
Direct functional substitutes within the same voltage class include the 2N6035G (if 60V rating is acceptable) or other generic PNP Darlington transistors matching the TO-225 package and 4A current rating. Always verify pinout compatibility and thermal specifications before substitution.
