2N6034G

2N6034G

$0.32
  • Description:TRANS PNP DARL 40V 4A TO-126
  • Series:-

SKU:2c14623a7a87 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PNP DARL 40V 4A TO-126
  • Series:-
  • Mfr:onsemi
  • Package:Bulk,Bulk
  • Transistor Type:PNP - Darlington
  • Current - Collector (Ic) (Max):4:00 AM
  • Voltage - Collector Emitter Breakdown (Max):40 V
  • Vce Saturation (Max) @ Ib, Ic:3V @ 40mA, 4A
  • Current - Collector Cutoff (Max):100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:750 @ 2A, 3V
  • Power - Max:40 W
  • Frequency - Transition:-
  • Operating Temperature:-65°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-225AA, TO-126-3
  • Supplier Device Package:TO-126
  • Grade:-
  • Qualification:-

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2N6034G

Overview

The onsemi 2N6034G is a PNP plastic Darlington complementary silicon power transistor designed for general-purpose amplifier and low-speed switching applications. It features a TO-225 package with a maximum collector-emitter voltage of 40 Vdc and continuous collector current of 4.0 Adc. The device offers high DC current gain ranging from 500 to 15,000 at specific test conditions and total device dissipation of 40 W at 25°C case temperature. It includes ESD protection ratings exceeding 400 V (Machine Model) and 8000 V (Human Body Model).

Feature Summary

  • Plastic Darlington complementary silicon construction optimized for robust performance.
  • High DC current gain suitable for amplification tasks.
  • Integrated electrostatic discharge protection capabilities.

Applications

  • General-purpose amplifier circuits
  • Low-speed switching applications

Procurement Notes

Verify the component datasheet revision status and ordering information before procurement. Confirm that the TO-225 package style matches the design requirements. Ensure compliance with RoHS standards and lead-free specifications as indicated in the manufacturer documentation. Check for any specific handling precautions related to the epoxy material ratings.

Selection Notes

Select this component when a PNP Darlington configuration is required for moderate voltage and current levels. Consider the 40 V collector-emitter rating and 4 A continuous current capability against circuit demands. Evaluate the thermal resistance characteristics for heat sinking needs. Compare the high current gain against alternative transistors to determine base drive requirements.

Part Context

This part belongs to the 2N603x series of plastic Darlington complementary silicon power transistors manufactured by onsemi. It serves as the PNP counterpart to NPN devices within the same family, such as the 2N6038G and 2N6039G. The series shares similar packaging and structural characteristics while differing in voltage ratings and polarity.

Replacement Considerations

Compatible substitutes include other PNP Darlington transistors with matching voltage and current ratings. Verify pinout compatibility with the TO-225 package. Ensure thermal and electrical parameters meet or exceed the original specifications for direct replacement.

FAQ

What is the maximum collector-emitter voltage for the 2N6034G?

The maximum collector-emitter voltage (VCEO) for the 2N6034G is 40 Vdc.

Is the 2N6034G RoHS compliant?

Yes, the 2N6034G is Pb-Free and RoHS compliant.

What is the typical DC current gain range?

The DC current gain (hFE) ranges from 500 to 15,000 depending on the collector current and test conditions.

2N6034G2N6034G
$0.32
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