2N6035 PBFREE

Overview

The Central Semiconductor Corp 2N6035 PBFREE is a plastic Darlington complementary silicon power transistor designed for general-purpose amplifier and low-speed switching applications. It features a maximum collector-emitter voltage (Vceo) of 40V, a continuous collector current (Ic) of 8A, and a maximum power dissipation (Pd) of 40W. The device operates within a junction temperature range of -65°C to 150°C and utilizes a TO-126 through-hole package.

Feature Summary

• Plastic Darlington complementary silicon construction
• Designed for general-purpose amplifier applications
• Optimized for low-speed switching operations

Applications

• General-purpose amplification circuits
• Low-speed switching applications

Procurement Notes

Verify the specific datasheet version and electrical characteristics directly from the manufacturer or authorized distributor before integration. Confirm that the TO-126 package dimensions and thermal resistance values align with your PCB layout and heat sinking requirements. Ensure compliance with RoHS standards as indicated by the PBFREE suffix.

Selection Notes

Select this component when a high-current Darlington configuration is required for low-frequency tasks. Consider the 40V voltage limit and 40W power rating against circuit demands. Evaluate the TO-126 package for adequate thermal management in the target environment compared to alternative packages.

Part Context

This part belongs to a series of complementary silicon power transistors manufactured by Central Semiconductor Corp. It is often paired with related NPN variants for push-pull configurations. The product line targets robust performance in audio and power supply circuits where high gain and current handling are prioritized over high-frequency response.

Replacement Considerations

Consult official cross-reference lists for direct substitutes. Verify pinout compatibility and thermal characteristics if replacing with similar TO-126 Darlington transistors from other manufacturers.