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The 2N6036G is a PNP plastic Darlington complementary silicon power transistor manufactured by onsemi. It features an 80 Vdc collector-emitter sustaining voltage and supports a continuous collector current of 4.0 Adc with peak currents reaching 8.0 Apk. The device provides high DC current gain, ranging from 500 to 15,000 depending on operating conditions. Total device dissipation is rated at 40 W at a case temperature of 25°C, with a thermal resistance junction-to-case of 3.12 °C/W. It operates within a junction temperature range of -65 to +150 °C.
Verify the specific datasheet revision (e.g., Rev. 15) when sourcing components to ensure alignment with electrical characteristics and mechanical dimensions. Confirm that the TO-225 package style matches the required pinout configuration for your design. Check for Pb-Free compliance markings if environmental regulations apply to your manufacturing process.
Select this component for designs requiring high current gain in PNP configurations. Ensure the application stays within the 80 Vdc voltage limit and 4.0 Adc continuous current constraints. Consider the thermal resistance values when designing heat sinking solutions to maintain junction temperatures below 150 °C during operation.
This part belongs to the 2N603x series of plastic Darlington complementary silicon power transistors. It serves as the PNP counterpart to NPN devices like the 2N6038G and 2N6039G. The series is designed for use in applications where high gain and moderate voltage handling are required in a single package.
Compatible substitutes include other PNP Darlington transistors with similar voltage and current ratings, such as the 2N6035G or generic equivalents meeting TO-225 Style 1 pinout specifications. Verify that replacement parts match the 80 Vdc VCEO requirement and 4.0 Adc IC rating.