2N6039 PBFREE

2N6039 PBFREE

$0.71
  • Description:4A 80V TH TRANSISTOR-BIPOLAR POW
  • Series:-

SKU:12b07993f474 Category: Brand:

  
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Product Detailed Parameters

  • Description:4A 80V TH TRANSISTOR-BIPOLAR POW
  • Series:-
  • Mfr:Central Semiconductor Corp
  • Package:Tube
  • Transistor Type:NPN - Darlington
  • Current - Collector (Ic) (Max):4:00 AM
  • Voltage - Collector Emitter Breakdown (Max):80 V
  • Vce Saturation (Max) @ Ib, Ic:2V @ 8mA, 2A
  • Current - Collector Cutoff (Max):100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:750 @ 2A, 3V
  • Power - Max:40 W
  • Frequency - Transition:25MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-225AA, TO-126-3
  • Supplier Device Package:TO-126
  • Grade:-
  • Qualification:-

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2N6039 PBFREE

Overview

The 2N6039 PBFREE is an NPN silicon Darlington power bipolar transistor manufactured by Central Semiconductor Corp. It features a maximum collector current of 4 A and a collector-emitter breakdown voltage of 80 V. The device operates with a transition frequency of 25 MHz and supports a total power dissipation of 40 W. It is housed in a TO-126 through-hole package, designed for robust mounting on printed circuit boards.

Feature Summary

  • Utilizes a Darlington configuration to achieve high DC current gain for efficient drive requirements
  • Constructed from silicon material suitable for general-purpose amplifier applications
  • Designed for low-speed switching operations within defined safe operating areas

Applications

  • General purpose amplifier circuits
  • Low-speed switching applications
  • Linear power applications requiring high gain

Procurement Notes

Verify the specific manufacturer source, as this component is documented across multiple suppliers including Central Semiconductor, TT Electronics, and ON Semiconductor. Confirm that the ordering suffix PBFREE corresponds to lead-free plating requirements per official datasheets. Ensure the TO-126 package type matches the target PCB footprint and thermal management strategy before finalizing procurement.

Selection Notes

Select this component when a high-gain NPN transistor is required for low-frequency linear or switching tasks. The 4 A current rating and 80 V voltage limit define its operational boundaries. Consider the TO-126 package for through-hole assembly needs. Verify thermal constraints against the 40 W dissipation capability and ensure the application stays within the specified second breakdown limits.

Part Context

This part belongs to a family of plastic Darlington complementary silicon power transistors. It serves as the NPN counterpart to PNP variants such as the 2N6034, 2N6035, and 2N6036. The series is engineered for durability in standard industrial and consumer electronics environments where moderate power handling and high gain are necessary.

Replacement Considerations

Compatible substitutes include the 2N6037, 2N6038, and other NPN Darlington transistors within the same complementary series. Cross-reference absolute maximum ratings and pinout configurations to ensure functional equivalence in existing designs.

2N6039 PBFREE2N6039 PBFREE
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