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The STMicroelectronics 2N6039 is an NPN silicon power Darlington transistor designed for general-purpose switching and amplifier applications. It features a collector-emitter voltage of 80 V, a continuous collector current of 4 A, and a peak collector current of 8 A. The device operates with a total dissipation of 40 W at a case temperature of 25°C and includes an integrated antiparallel collector-emitter diode. It is housed in a SOT-32 (TO-126) plastic package.
Verify the specific manufacturer source when sourcing this component, as it may be produced by various semiconductor foundries under the same JEDEC designation. Confirm that the received part matches the SOT-32 physical dimensions and electrical characteristics outlined in the official datasheet to ensure compatibility with existing designs.
Select the 2N6039 for applications requiring high current gain and robust switching capabilities within an 80 V voltage range. Consider the thermal resistance values and the need for adequate heat sinking to maintain safe operating temperatures during operation. Ensure the base drive current meets the requirements for full saturation at the intended load current.
This component belongs to a family of complementary silicon power Darlington transistors, paired with the 2N6036 PNP variant. Both devices share similar structural characteristics and are mounted in the SOT-32 plastic package, facilitating their use in push-pull or complementary configurations within electronic circuits.
Direct substitutes include the 2N6036 for the complementary PNP role. Verify pinout compatibility and thermal performance before replacing components from other manufacturers using the standard 2N6039 designation.
Yes, the device features an integrated antiparallel collector-emitter diode.
The continuous collector current is rated at 4 A, with a peak current capability of 8 A.