2N6039G

2N6039G

  • Description:TRANS NPN DARL 80V 4A TO-126
  • Series:-

SKU:d339397b9308 Category: Brand:

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Product Detailed Parameters

  • Description:TRANS NPN DARL 80V 4A TO-126
  • Series:-
  • Mfr:onsemi
  • Package:Bulk
  • Transistor Type:NPN - Darlington
  • Current - Collector (Ic) (Max):4:00 AM
  • Voltage - Collector Emitter Breakdown (Max):80 V
  • Vce Saturation (Max) @ Ib, Ic:3V @ 40mA, 4A
  • Current - Collector Cutoff (Max):100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:750 @ 2A, 3V
  • Power - Max:40 W
  • Frequency - Transition:-
  • Operating Temperature:-65°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-225AA, TO-126-3
  • Supplier Device Package:TO-126
  • Grade:-
  • Qualification:-

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2N6039G

Overview

The onsemi 2N6039G is a plastic NPN Darlington complementary silicon power transistor designed for general-purpose amplifier and low-speed switching applications. It features an 80 V collector-emitter sustaining voltage, a continuous collector current of 4 A, and a peak collector current of 8 A. The device offers a minimum DC current gain of 500 at 0.5 A and up to 15,000 at lower currents. Total device dissipation reaches 40 W at a case temperature of 25°C. It operates within a junction temperature range of -65°C to +150°C and utilizes a TO-225AA (TO-225) package.

Feature Summary

  • High DC current gain ranging from 500 to 15,000 depending on operating conditions
  • Robust thermal performance with a maximum junction-to-case thermal resistance of 3.12 °C/W
  • ESD protection exceeding 400 V via the Machine Model standard
  • Epoxy molding compound meets UL 94 V-0 flammability ratings

Applications

  • General-purpose amplifiers
  • Low-speed switching circuits

Procurement Notes

Verify component authenticity by checking the marking diagram against the physical device. Confirm the presence of the Pb-Free indicator 'G' or microdot symbol. Ensure the ordering suffix matches the specific package style required. Cross-reference the manufacturer part number with official datasheets to validate specifications before integration into designs.

Selection Notes

Select this component when high current gain and robust power handling are required for NPN applications. The 80 V rating distinguishes it from the 40 V and 60 V variants in the same family. Consider the TO-225 package constraints for thermal management and mounting requirements. Evaluate the safe-operating area curves to ensure operation remains within second breakdown limits during switching events.

Part Context

The 2N6039G belongs to the Plastic Darlington Complementary Silicon Power Transistors series manufactured by onsemi. It serves as the NPN counterpart to the PNP 2N6035G. This family includes devices with varying voltage ratings: 2N6034G (40 V), 2N6035G (60 V), 2N6036G (PNP 60 V), 2N6038G (PNP 80 V), and 2N6039G (NPN 80 V). All share identical pinouts and mechanical dimensions.

Replacement Considerations

Direct substitutes within the same voltage class include the 2N6038G, which is the PNP complement with identical 80 V ratings. Other family members like the 2N6035G offer similar electrical characteristics but operate at a lower 60 V rating. Verify pinout compatibility and thermal resistance values when considering cross-family replacements.

2N6039G2N6039G

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