2N6040

2N6040

  • Description:TRANS PNP DARL 60V 8A TO-220
  • Series:-

SKU:3734d5357bab Category: Brand:

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Product Detailed Parameters

  • Description:TRANS PNP DARL 60V 8A TO-220
  • Series:-
  • Mfr:onsemi
  • Package:Tube
  • Transistor Type:PNP - Darlington
  • Current - Collector (Ic) (Max):8:00 AM
  • Voltage - Collector Emitter Breakdown (Max):60 V
  • Vce Saturation (Max) @ Ib, Ic:2V @ 16mA, 4A
  • Current - Collector Cutoff (Max):20µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:1000 @ 4A, 4V
  • Power - Max:75 W
  • Frequency - Transition:-
  • Operating Temperature:-65°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3
  • Supplier Device Package:TO-220
  • Grade:-
  • Qualification:-

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2N6040

Overview

The onsemi 2N6040 is a plastic medium-power complementary silicon NPN Darlington transistor designed for general-purpose amplifier and low-speed switching applications. It features high DC current gain, typically 2500 at 4.0 A collector current, and a collector-emitter sustaining voltage of 100 Vdc minimum at 100 mA. The device exhibits a low collector-emitter saturation voltage of 2.0 Vdc maximum at 4.0 A. It incorporates monolithic construction with built-in base-emitter shunt resistors to enhance stability. The component meets UL 94 V-0 flammability standards and offers robust ESD protection ratings exceeding 8000 V via the human body model.

Feature Summary

  • High DC current gain optimized for efficient signal amplification
  • Low collector-emitter saturation voltage for reduced power loss
  • Monolithic construction with integrated base-emitter shunt resistors
  • Robust electrostatic discharge protection capabilities

Applications

  • General-purpose amplifier circuits
  • Low-speed switching applications
  • Complementary silicon power transistor pairs

Procurement Notes

Verify the specific revision level against the latest official datasheet to ensure compatibility with design requirements. Confirm that the ordering suffix matches the desired packaging configuration. Check for any recent product change notices regarding material composition or manufacturing site changes. Ensure compliance with relevant environmental directives applicable to your region before finalizing procurement decisions.

Selection Notes

Select this component when high current gain and low saturation voltage are critical for amplifier efficiency. The integrated base-emitter resistor simplifies biasing networks in switching designs. Consider the thermal characteristics and package limitations for heat dissipation needs. Verify that the 100 V collector-emitter voltage rating aligns with the maximum operating voltages of the target circuit application.

Part Context

This part belongs to the complementary silicon power transistor family from onsemi. It is engineered for medium-power applications requiring reliable performance in analog and digital switching environments. The device utilizes advanced planar technology to achieve consistent electrical characteristics across production batches while maintaining cost-effectiveness for mass-market electronic equipment.

Replacement Considerations

Consult official cross-reference lists for verified substitutes. Ensure replacement parts match the TO-220 package dimensions and pinout configuration. Verify that alternative components meet or exceed the original 100 V voltage rating and 4 A current handling capabilities.

2N60402N6040

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