2N6040G

2N6040G

  • Description:TRANS PNP DARL 60V 8A TO-220
  • Series:-

SKU:d88b6e191ddd Category: Brand:

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Product Detailed Parameters

  • Description:TRANS PNP DARL 60V 8A TO-220
  • Series:-
  • Mfr:onsemi
  • Package:Tube
  • Transistor Type:PNP - Darlington
  • Current - Collector (Ic) (Max):8:00 AM
  • Voltage - Collector Emitter Breakdown (Max):60 V
  • Vce Saturation (Max) @ Ib, Ic:2V @ 16mA, 4A
  • Current - Collector Cutoff (Max):20µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:1000 @ 4A, 4V
  • Power - Max:75 W
  • Frequency - Transition:-
  • Operating Temperature:-65°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3
  • Supplier Device Package:TO-220
  • Grade:-
  • Qualification:-

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2N6040G

Overview

The 2N6040G is a plastic medium-power complementary silicon transistor manufactured by onsemi. It is designed for general-purpose amplifier and low-speed switching applications. The device features monolithic construction with built-in base-emitter shunt resistors to ensure stable operation. It offers high DC current gain, typically 2500 at an collector current of 4.0 Adc. The collector-emitter sustaining voltage is specified at a minimum of 60 Vdc at 100 mAdc. The component exhibits low collector-emitter saturation voltage, with a maximum of 2.0 Vdc at 4.0 Adc. It is available in a lead-free and RoHS compliant package that meets UL 94 V-0 flammability standards.

Feature Summary

  • High DC current gain for efficient signal amplification
  • Monolithic construction with integrated base-emitter shunt resistors
  • Low collector-emitter saturation voltage for reduced power loss
  • Robust electrostatic discharge protection ratings

Applications

  • General-purpose amplifier circuits
  • Low-speed switching applications
  • Complementary silicon power transistor stages

Procurement Notes

Verify the specific suffix G against the official datasheet to confirm package type and compliance status. Ensure the ordering part number matches the exact electrical specifications required for the design. Cross-reference the manufacturer's latest documentation for any updates to mechanical dimensions or thermal characteristics before finalizing procurement.

Selection Notes

Select this component for designs requiring medium-power complementary silicon transistors with high current gain. The integrated shunt resistors simplify biasing networks in amplifier stages. Consider the thermal performance and saturation voltage when designing for efficiency. Verify compatibility with the intended operating temperature range and voltage requirements of the target application circuit.

Part Context

This component belongs to the family of plastic medium-power complementary silicon transistors from onsemi. These devices are engineered for reliability in general-purpose electronic circuits. The complementary nature allows for push-pull configurations in audio and power management applications. The technology focuses on providing stable performance with minimal external components due to internal resistor integration.

Replacement Considerations

Consult the official datasheet for direct pin-compatible substitutes within the same product family. Verify that alternative parts meet the required current gain and voltage specifications. Ensure any replacement maintains the same package style and thermal properties for seamless integration into existing PCB layouts.

2N6040G2N6040G

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