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Product Detailed Parameters
- Description：TRANS NPN DARL 60V 8A TO-220
- Series：-
- Mfr：onsemi
- Package：Tube
- Transistor Type：NPN - Darlington
- Current - Collector (Ic) (Max)：8:00 AM
- Voltage - Collector Emitter Breakdown (Max)：60 V
- Vce Saturation (Max) @ Ib, Ic：2V @ 16mA, 4A
- Current - Collector Cutoff (Max)：20µA
- DC Current Gain (hFE) (Min) @ Ic, Vce：1000 @ 4A, 4V
- Power - Max：75 W
- Frequency - Transition：-
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220
- Grade：-
- Qualification：-
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Overview
The onsemi 2N6043 is an NPN silicon power transistor designed for medium-power applications. It features a maximum collector-emitter voltage of 60 V and a continuous collector current rating of 8 A. The device utilizes a Darlington configuration with built-in diode and resistor components to enhance switching performance and stability. Housed in a TO-220AB flange mount package, it supports a maximum power dissipation of 75 W and operates at junction temperatures up to 150 °C. This component is suitable for general-purpose amplification and switching tasks requiring high current gain.
Feature Summary
- Darlington configuration with integrated protection components
- High current handling capability for power applications
- Robust thermal management via flange mount packaging
Applications
- General-purpose power amplification
- Switching circuits in industrial equipment
- Audio output stages
Procurement Notes
Verify the manufacturer source carefully as multiple vendors produce this part number. Confirm the specific datasheet revision matches your design requirements. Check for RoHS compliance status if environmental regulations apply. Ensure the TO-220AB package dimensions align with your PCB layout constraints before finalizing procurement.
Selection Notes
Select this component when a high-gain NPN transistor is required for moderate voltage and current levels. The integrated resistor and diode simplify circuit design by reducing external component count. Consider the thermal resistance of the TO-220AB package and ensure adequate heatsinking is available for sustained operation near the maximum power dissipation limit.
Part Context
This transistor belongs to the family of complementary silicon power transistors often paired with PNP counterparts like the 2N6044. It is widely used in linear and switching applications where reliable high-current amplification is necessary. The TO-220AB package provides a balance between power handling and ease of mounting on standard heat sinks.
Replacement Considerations
Direct substitutes include the BDX53B and TIP110 from various manufacturers. Verify pinout compatibility and electrical parameters such as hFE and VCEO before substitution. Ensure the replacement device meets the same thermal and voltage ratings required by the original design.
