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Product Detailed Parameters
- Description：8A 80V TH TRANSISTOR-BIPOLAR POW
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Tube
- Transistor Type：NPN - Darlington
- Current - Collector (Ic) (Max)：8:00 AM
- Voltage - Collector Emitter Breakdown (Max)：80 V
- Vce Saturation (Max) @ Ib, Ic：2V @ 16mA, 4A
- Current - Collector Cutoff (Max)：20µA
- DC Current Gain (hFE) (Min) @ Ic, Vce：1000 @ 4A, 4V
- Power - Max：75 W
- Frequency - Transition：4MHz
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220-3
- Grade：-
- Qualification：-
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Overview
The Central Semiconductor Corp 2N6044 PBFREE is a high-power NPN silicon epitaxial planar transistor designed for demanding applications. It features a collector-emitter voltage (VCEO) of 80 V and a continuous collector current (IC) of 5 A. The device supports a maximum power dissipation (PD) of 75 W when mounted to an appropriate heatsink. Key electrical characteristics include a collector-base breakdown voltage (VCBO) of 100 V, an emitter-base breakdown voltage (VEBO) of 7 V, and a DC current gain (hFE) ranging from 20 to 150 at a collector current of 500 mA. The component utilizes a TO-66 metal can package.
Feature Summary
- High power handling capability with 75 W dissipation rating in TO-66 package
- Robust 5 A continuous collector current capacity for heavy load switching
- Epitaxial planar silicon construction ensuring stable thermal performance
Applications
- High-current linear regulation circuits
- Power amplifier output stages
- Industrial motor control systems
Procurement Notes
Verify the specific suffix against the manufacturer's official datasheet to confirm exact binning or testing criteria. Ensure the procurement channel provides valid RoHS compliance documentation matching the PBFREE designation. Confirm that the TO-66 package dimensions align with the intended chassis mounting requirements before finalizing orders.
Selection Notes
Select this component for designs requiring substantial current handling within a hermetically sealed metal envelope. Compare the 80 V VCEO rating against peak transient voltages in the circuit. Evaluate the thermal resistance requirements for maintaining the 75 W dissipation limit under worst-case operating conditions.
Part Context
This part belongs to the 2N60 series of high-power NPN transistors manufactured by Central Semiconductor. These devices are engineered for rugged environments where reliability is critical. The series typically offers superior thermal stability compared to standard plastic-packaged equivalents, making them suitable for aerospace and military-grade hardware.
Replacement Considerations
Consult official substitution guides for equivalent high-power NPN transistors in TO-66 packages. Verify pinout compatibility and ensure replacement parts meet the same 5 A current and 75 W power dissipation specifications.
