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The 2N6047 is an NPN silicon power bipolar junction transistor manufactured by Microchip Technology. It features a collector-emitter breakdown voltage of 100 V and a maximum continuous collector current of 20 A. The device supports a maximum power dissipation of 114 W and operates within a junction temperature range of -65°C to 200°C. It is housed in the TO-210AE package, designed for high-current handling applications requiring precise control.
Verify the specific manufacturer part number against official Microchip Technology documentation to ensure authenticity. Confirm that the component matches the required TO-210AE package style and electrical specifications. Request traceability data and counterfeit risk mitigation reports from authorized distributors to guarantee supply chain integrity and compliance with quality standards.
Select this component when designing circuits requiring high current capacity and wide thermal operation limits. Ensure the application voltage does not exceed the 100 V breakdown rating. Verify that the thermal management solution can handle the 114 W power dissipation within the specified junction temperature range. Compare against complementary PNP variants if push-pull configurations are necessary.
The 2N6047 belongs to the family of single NPN bipolar junction transistors produced by Microchip Technology. It is categorized under power BJTs intended for robust electronic applications. The component is listed as active in the product lifecycle, indicating ongoing manufacturing support and availability for new designs requiring standard NPN power transistor characteristics.
Consult official Microchip Technology substitution guides for verified alternative part numbers. Cross-reference electrical parameters such as current ratings and voltage breakdowns to ensure compatibility. Do not assume functional equivalence with generic industry parts without validating specific datasheet requirements.