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Product Detailed Parameters
- Description：PNP POWER TRANSISTOR SILICON AMP
- Series：*
- Mfr：Microchip Technology
- Package：Bulk
- Transistor Type：-
- Current - Collector (Ic) (Max)：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Vce Saturation (Max) @ Ib, Ic：-
- Current - Collector Cutoff (Max)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- Power - Max：-
- Frequency - Transition：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
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Overview
The Microchip Technology 2N6052 is a PNP Darlington power silicon transistor designed for general-purpose amplifier and low-frequency switching applications. It features a monolithic construction with butt-in base-emitter shunt resistors to ensure stable operation. The device is housed in a TO-3 package, providing robust thermal performance for high-power environments. Key electrical specifications include a collector-emitter voltage of -100V, a continuous collector current of 12A, and a total power dissipation of 150W. The transition frequency is rated at 4 MHz, supporting its utility in specific analog signal processing tasks.
Feature Summary
- Monolithic construction with integrated base-emitter shunt resistors for enhanced stability
- High DC current gain capability typical of Darlington configurations
- Designed for general-purpose amplifier and low-frequency switching applications
Applications
- General-purpose amplification circuits
- Low-frequency switching applications
- Power control systems requiring high current gain
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm exact electrical characteristics and packaging options. Ensure that the procurement channel provides authentic components from authorized sources to guarantee reliability. Cross-reference the part number with the latest datasheet revisions to confirm compatibility with existing design parameters before finalizing orders.
Selection Notes
Select this component when high current gain and robust power handling are required in a PNP configuration. The TO-3 package offers significant thermal advantages for high-power dissipation scenarios. Consider the 4 MHz transition frequency limit when designing for higher-speed applications, as it may restrict suitability for RF or fast-switching digital circuits compared to faster alternatives.
Part Context
The 2N6052 belongs to the family of silicon PNP power transistors manufactured by Microchip Technology. It serves as a complementary device within power electronics designs, often paired with NPN counterparts for push-pull amplifier stages. The TO-3 metal can package distinguishes it from smaller surface-mount devices, targeting industrial and high-power consumer applications where thermal management is critical.
Replacement Considerations
Consult official substitution lists for verified equivalents. Generic replacements may differ in pinout, thermal resistance, or maximum ratings. Verify compatibility with existing circuit constraints before integrating substitute parts.
FAQ
What is the maximum collector-emitter voltage rating?
The absolute maximum rating for collector-emitter voltage is -100V.
Does the device include internal protection components?
Yes, it features monolithic construction with butt-in base-emitter shunt resistors.
