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Product Detailed Parameters
- Description：PNP POWER TRANSISTOR SILICON AMP
- Series：*
- Mfr：Microchip Technology
- Package：Bulk
- Transistor Type：-
- Current - Collector (Ic) (Max)：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Vce Saturation (Max) @ Ib, Ic：-
- Current - Collector Cutoff (Max)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- Power - Max：-
- Frequency - Transition：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
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Overview
The Microchip Technology 2N6059 is a silicon NPN power bipolar junction transistor (BJT) housed in a TO-3 metal flange mount package. It features a maximum collector-emitter voltage of 100 V and a continuous collector current rating of 12 A. The device supports a total power dissipation of 150 W at 25°C case temperature, with a thermal resistance from junction to case of 1.00 °C/W. Operating temperatures range from -55°C to +175°C. The minimum DC current gain (hFE) is specified at 150, with a maximum of 18,000.
Feature Summary
- Hermetically sealed metal TO-3 package for high reliability
- High current handling capability up to 12 A
- Wide operating temperature range suitable for harsh environments
Applications
- Power linear applications
- Low frequency switching circuits
- Military and aerospace systems requiring hermetic sealing
Procurement Notes
Verify the specific revision level and manufacturing date code upon order confirmation. Confirm compliance with relevant military specifications if required for your application. Check for any product change notifications that may affect pinout or electrical characteristics. Ensure proper thermal management solutions are integrated into the design to maintain junction temperatures within safe limits during operation.
Selection Notes
Select this component when high current capacity and robust packaging are required. Consider the TO-3 package size and mounting requirements for your mechanical design. Evaluate the thermal resistance and power dissipation capabilities against your system's heat sink constraints. Compare the current gain range with your base drive circuit requirements to ensure adequate saturation or amplification performance.
Part Context
The 2N6059 belongs to the family of silicon NPN power transistors manufactured by Microchip Technology. It is often used as a complement to other devices in power amplifier stages. The TO-3 package provides excellent thermal conductivity and mechanical durability, making it suitable for industrial and defense applications where long-term reliability under stress conditions is critical.
Replacement Considerations
The 2N6058 is a related device with similar current ratings but lower voltage specifications. Verify voltage requirements before substitution. Other NPN power transistors in the TO-3 package may require re-evaluation of thermal and electrical parameters.
