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Product Detailed Parameters
- Description：TRANS NPN DARL 100V 12A TO-3
- Series：-
- Mfr：STMicroelectronics
- Package：Tube
- Transistor Type：NPN - Darlington
- Current - Collector (Ic) (Max)：12:00 AM
- Voltage - Collector Emitter Breakdown (Max)：100 V
- Vce Saturation (Max) @ Ib, Ic：3V @ 120mA, 12A
- Current - Collector Cutoff (Max)：1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce：750 @ 6A, 3V
- Power - Max：150 W
- Frequency - Transition：4MHz
- Operating Temperature：200°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：TO-204AA, TO-3
- Supplier Device Package：TO-3
- Grade：-
- Qualification：-
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Overview
The STMicroelectronics 2N6059 is a silicon NPN power Darlington transistor housed in a TO-3 metal case. It features an epitaxial-base monolithic configuration with an integrated antiparallel collector-emitter diode. Key electrical ratings include a maximum collector current of 12 A, peak collector current of 20 A, and total dissipation of 150 W at 25°C. The device supports a collector-emitter voltage of 100 V and operates up to a junction temperature of 200°C.
Feature Summary
- Monolithic Darlington configuration for high DC current gain
- Integrated antiparallel collector-emitter diode
- High current and high dissipation capability
- Designed for linear and low-frequency switching applications
Applications
- Power linear industrial equipment
- Low frequency switching industrial equipment
Procurement Notes
Verify component status as the datasheet indicates this product is obsolete. Confirm availability through authorized distributors or secondary markets. Ensure compatibility with legacy system designs requiring TO-3 packaging. Review thermal management requirements carefully given the high power dissipation rating. Validate that the integrated diode meets specific circuit protection needs.
Selection Notes
Select this component for applications requiring high current handling and robust power dissipation in a traditional metal package. Consider the high saturation voltage when designing for efficiency. Evaluate the transition frequency limitations for switching speed requirements. Ensure adequate heat sinking is provided to maintain junction temperatures within safe operating limits during continuous operation.
Part Context
This part belongs to the family of silicon NPN power Darlington transistors manufactured by STMicroelectronics. It utilizes a monolithic construction technique to integrate multiple transistor stages on a single chip. The TO-3 package provides mechanical stability and efficient thermal transfer to external heatsinks, suitable for heavy-duty industrial environments.
Replacement Considerations
Consult official cross-reference lists for direct replacements. Verify pinout compatibility and thermal resistance values. Ensure replacement devices meet the same voltage and current ratings. Check for updated manufacturing processes if long-term supply stability is required.
FAQ
What is the maximum operating junction temperature?
The maximum operating junction temperature is 200°C.
Does the device include internal protection components?
Yes, it includes an integrated antiparallel collector-emitter diode.
What is the typical DC current gain at 6A collector current?
The typical DC current gain (hFE) is 750 at a collector current of 6A.
