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Product Detailed Parameters
- Description：TRANS PNP 100V 50A TO-63
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：50 A
- Voltage - Collector Emitter Breakdown (Max)：100 V
- Vce Saturation (Max) @ Ib, Ic：-
- Current - Collector Cutoff (Max)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- Power - Max：262 W
- Frequency - Transition：-
- Operating Temperature：-65°C ~ 200°C (TJ)
- Mounting Type：Stud Mount
- Package / Case：TO-211MB, TO-63-4, Stud
- Supplier Device Package：TO-63
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Overview
The 2N6061 is a silicon planar epitaxial NPN power transistor manufactured by Microchip Technology. It belongs to the Bipolar Junction Transistor (BJT) category and is designed for high-power switching applications. The device utilizes a hermetically sealed TO-3 metal case, providing robust thermal dissipation capabilities suitable for demanding environments. As a discrete component, it serves as a fundamental active element in linear and switching circuits requiring high voltage and current handling.
Feature Summary
- Hermetically sealed metal package for environmental protection
- Planar epitaxial construction for reliability
- High power handling capability
Applications
- High-power switching circuits
- Linear amplifier stages
- Industrial control systems
Procurement Notes
Verify the specific manufacturer source, as the 2N6061 designation may be held by multiple vendors including legacy manufacturers. Confirm that the received component matches the required TO-3 package dimensions and pinout configuration. Ensure compliance with relevant quality standards if the application demands aerospace or military specifications, as standard commercial versions may differ in testing rigor.
Selection Notes
Select this component when a rugged, high-power NPN transistor is required for applications involving significant heat dissipation. The TO-3 package necessitates appropriate mounting hardware and thermal interface materials. Consider the base drive requirements and saturation voltage characteristics during circuit design to ensure efficient operation within the intended load parameters.
Part Context
The 2N6061 is part of the broader family of silicon NPN power transistors. It shares functional similarities with other high-power BJT devices but is distinguished by its specific packaging and historical manufacturing lineage. This component type is often utilized in legacy designs or specialized industrial equipment where proven reliability and high thermal performance are critical.
Replacement Considerations
Direct substitutes include the 2N6062 PNP counterpart for complementary push-pull configurations. Other compatible high-power NPN transistors in the TO-3 package should be evaluated based on matching collector-emitter voltage and current ratings.
