2N6062

Overview

The Microchip Technology 2N6062 is a silicon NPN power bipolar junction transistor (BJT) designed for high-power switching applications. It utilizes a TO-3 metal can package to facilitate efficient thermal dissipation. The device supports a collector-emitter voltage of 90V and handles a continuous collector current of 50A. With a maximum power dissipation rating of 140W, it operates reliably within an extended temperature range from -65°C to +200°C. This component is suitable for robust industrial environments requiring durable semiconductor switching solutions.

Feature Summary

• High power handling capability with 140W dissipation rating
• Extended operating temperature range up to 200°C
• Robust TO-3 metal can packaging for thermal management

Applications

• Industrial motor control systems
• High-current power switching circuits
• Automotive heavy-duty electrical systems

Procurement Notes

Verify the specific manufacturer source, as this part may be produced under legacy agreements involving Microsemi or other authorized entities. Confirm that the delivered unit matches the exact JAN2N6062 specification sheet requirements. Ensure the TO-3 package dimensions align with your existing heatsink infrastructure. Validate that the supplier provides traceability documentation consistent with military-grade procurement standards if required by your design specifications.

Selection Notes

Select this component when designing circuits requiring high current capacity and wide thermal tolerance. The TO-3 package necessitates appropriate mounting hardware and thermal interface materials. Consider the 90V voltage limit when selecting protective components for inductive loads. Ensure the driving circuitry can supply sufficient base current to achieve saturation at the specified 50A load level without exceeding gain limits.

Part Context

This device belongs to the family of high-power NPN transistors historically associated with MIL-SPEC standards. It serves as a rugged alternative to standard commercial power transistors in demanding environments. The TO-3 form factor distinguishes it from modern surface-mount devices, offering superior mechanical stability and heat transfer capabilities for chassis-mounted installations.

Replacement Considerations

JAN2N6032