2N6107

Overview

The onsemi 2N6107 is a power N-channel Junction Field-Effect Transistor (JFET) designed for switching applications. It utilizes silicon technology and is housed in a TO-92 through-hole package with three pins. Key electrical specifications include a gate-source breakdown voltage of -25 V, a gate-source cutoff voltage of -4.5 V, and a drain-source on-resistance of 8 Ohms at zero gate-source voltage. The device supports a continuous drain current ranging from 10 mA to 40 mA when the gate-source voltage is 0 V. It features a maximum power dissipation of 625 mW and operates within a temperature range of -55 °C to +150 °C.

Feature Summary

• Provides reliable switching functionality using N-channel JFET technology
• Features low on-resistance characteristics for efficient signal control
• Supports wide operating temperature ranges suitable for demanding environments

Applications

• Analog signal switching circuits
• Electronic load testing equipment
• Precision measurement instrumentation

Procurement Notes

Verify the specific manufacturer source and authenticity before procurement, as component availability may vary. Confirm that the TO-92 package dimensions match your PCB footprint requirements. Ensure the selected variant meets the required thermal management standards for your specific application environment. Check for any recent product change notifications regarding material composition or manufacturing location changes.

Selection Notes

Select this component when a robust N-channel JFET switch is required for analog signals. Consider the 8 Ohm on-resistance and 625 mW power dissipation limits during circuit design. Evaluate the -25 V gate-source breakdown voltage to ensure adequate protection against overvoltage conditions. Verify compatibility with the intended operating temperature range of -55 °C to +150 °C for your specific deployment scenario.

Part Context

The 2N6107 belongs to the family of discrete semiconductor transistors manufactured by onsemi. As an N-channel JFET, it serves distinct roles compared to MOSFETs or bipolar transistors, particularly in high-impedance switching applications. The TO-92 package provides a compact solution for through-hole mounting, making it suitable for various general-purpose electronic designs requiring reliable field-effect transistor performance.

Replacement Considerations

Consult official cross-reference guides for verified equivalent part numbers. Ensure any substitute maintains identical pinout configurations and electrical parameters such as breakdown voltage and on-resistance. Verify package compatibility and thermal characteristics before implementation.